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首页> 外文期刊>Journal of Crystal Growth >Strain relaxation of AlN epilayers for Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy
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Strain relaxation of AlN epilayers for Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy

机译：金属有机气相外延生长Stranski-Krastanov GaN / AlN量子点的AlN外延层的应变弛豫

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摘要

We report a study of self-assembled GaN/AlN quantum dots (QDs) grown by metalorganic vapor phase epitaxy. We have investigated the impact of the AlN template quality on the nucleation of QDs obtained by the so-called Stranski-Krastanov growth mode transition. It is shown that the AlN epilayer deposited on GaN exhibits different relaxation steps. A rather inefficient plastic relaxation first occurs in the early few nanometers. Then, as the growth proceeds cracks are generated to further release the elastic energy. However, Raman spectroscopy indicates that strain relaxation takes place only nearby the cracks. Consequently, a third relaxation process occurs as the AlN layer thickness still increases. It is characterized by V-shape pits at the AlN surface likely originating from opening of threading dislocation terminations. Atomic force microscopy and micro-photoluminescence studies indicate that these topological defects act as preferential nucleation centers competing with the GaN QD formation.
机译：我们报告了由金属有机气相外延生长的自组装GaN / AlN量子点（QDs）的研究。我们已经研究了AlN模板质量对通过所谓的Stranski-Krastanov生长模式转变获得的QD成核的影响。结果表明，沉积在GaN上的AlN外延层表现出不同的弛豫步骤。相当无效的塑性松弛首先出现在早期的几纳米中。然后，随着生长的进行，产生裂纹以进一步释放弹性能。然而，拉曼光谱表明应变松弛仅在裂纹附近发生。因此，随着AlN层厚度的增加，发生第三张弛豫过程。它的特征是AlN表面的V形凹坑可能源自螺纹位错终端的打开。原子力显微镜和微光致发光研究表明，这些拓扑缺陷是与GaN QD形成竞争的优先成核中心。

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