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首页> 外文期刊>Journal of Crystal Growth >Growth of thick and pure cublic GaN on (0 0 1) GaAs by halide VPE
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Growth of thick and pure cublic GaN on (0 0 1) GaAs by halide VPE

机译：卤化物VPE在（0 0 1）GaAs上生长厚而纯的立方氮化镓

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To obtain a thcik and pure cubic GaN layer, a hybrid growth of the halide vapor phase epitaxy (HVPE) and he metal organic MBE (MOMBE) was performed. An about 20 thick GaN buffer laeyr was grown on (0 0 1) GaAs by MOMBE using tertiary butyl hydrazine in a MBE chamber. Thick GaN layers were grwon on it by a conventional HVPE system using H_2 as a carrier gas. When the thickness was less than 2 μm, the hexagonal component n the grown layer was less than 1/100 for a V/III ratio of 200, but it increased exponentilly with an incrase of the grwoth time and it became about 10/100 at 5 μm (2 h growth) and about 40/100 at 10μm (3 h growth). These thicknesses are about three times larger than those genrally obtained by GSMBE or MOVPE with the same hexagonal content. The grown surface became rough with an incrase of thickness and herefore of hexagonal content. Photoluminescnce was very poor even for a pure cublic GaN probably due to autodoping by arsenic.
机译：为了获得厚实的立方氮化镓层，进行了卤化物气相外延（HVPE）和金属有机MBE（MOMBE）的混合生长。在MBE室中使用叔丁基肼，通过MOMBE在（0 0 1）GaAs上生长约20厚的GaN缓冲层。通过使用H_2作为载气的常规HVPE系统在其上生长厚的GaN层。当厚度小于2μm时，对于200的V / III比，生长层中的六边形组分小于1/100，但是随着苛刻时间的增加，它的指数增加，并且在20℃时变为约10/100。 5μm（2 h增长）和10μm（3 h增长）约40/100。这些厚度大约是通常由具有相同六角形含量的GSMBE或MOVPE获得的厚度的三倍。生长的表面变得粗糙，具有增加的厚度，因此具有六方含量。即使对于纯立方氮化镓，光致发光也很差，这可能是由于砷的自动掺杂所致。

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