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首页> 外文期刊>Journal of Crystal Growth >Large scale tapered GaN rods grown by chemical vapour deposition
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Large scale tapered GaN rods grown by chemical vapour deposition

机译:通过化学气相沉积法生长的大型锥形GaN棒

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Large quantities of gallium nitride-tapered rods with sharp-tip were synthesized by a chemical vapour deposition method using the reaction of ammonia with the mixture of gallium oxide and carbon. The as-prepared rods have triangle cross section with lateral slope tapered to their ends; they are single-crystalline wurtzite structure crystals grown with the [1 1 2 0] direction. The axial self-catalytic vapour-liquid-solid (VLS) growth and radial vapour-solid (VS) growth mechanism as well as the change of reactive atomic ratio (Ga/N) during growth process were believed to contribute to the formation of tapered rods. (c) 2006 Elsevier B.V. All rights reserved.
机译:利用氨与氧化镓和碳的混合物反应,通过化学气相沉积法合成了大量尖锐的氮化镓锥形棒。所制备的杆的横截面为三角形,其端部的侧斜率逐渐减小。它们是沿[1 1 2 0]方向生长的单晶纤锌矿结构晶体。轴向自催化汽-液-固(VLS)的生长和径向汽-固(VS)的生长机理以及生长过程中反应性原子比(Ga / N)的变化被认为有助于形成锥形棒。 (c)2006 Elsevier B.V.保留所有权利。

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