Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE

Richter E; Hennig C; Weyers M; Habel F; Tsay JD; Liu WY; Bruckner P; Scholz F; Makarov Y; Segal A

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Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE

机译：通过HVPE在蓝宝石衬底上生长厚GaN层的反应器和生长工艺优化

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In total, 120 mu m thick GaN layers without cracks have been grown on 2 in sapphire substrates by hydride vapor phase epitaxy. This has been achieved by optimization of the flow patterns in the reactor based on 3D process modelling, choice of the growth parameters especially the carrier gas composition and the usage of suitable GaN/sapphire templates. An important finding is that an H-2 content of around 50% in the N-2 carrier yields the lowest crack density. (c) 2005 Elsevier B.V. All rights reserved.

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来源
《Journal of Crystal Growth》 |2005年第4期|p. 6-12|共7页
作者
Richter E; Hennig C; Weyers M; Habel F; Tsay JD; Liu WY; Bruckner P; Scholz F; Makarov Y; Segal A;
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作者单位

Ferdinand Braun Inst Hoechstfrequenztech, D-12489 Berlin, Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
III-V semiconductors; vapor phase epitaxy; VAPOR-PHASE EPITAXY; MECHANISM; CRACKING; FILMS;

机译：III-V族半导体;气相外延;汽相外延;机理;开裂;薄膜;

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专利

1. Growth optimization for thick crack-free GaN layers on sapphire with HVPE [J] . E. Richter, Ch. Hennig, H. Kissel, Physica Status Solidi. C, Conferences and critical reviews . 2005,第7期

机译：利用HVPE对蓝宝石上的厚厚无裂纹GaN层进行生长优化
2. Growth of thick GaN layers on laser-processed sapphire substrate by hydride vapor phase epitaxy [J] . Koji Koyama, Hideo Aida, Seong-Woo Kim, Journal of Crystal Growth . 2014,第octa1期

机译：氢化物气相外延在蓝宝石衬底上生长厚的GaN层
3. Growth of Thick GaN Layers by Hydride Vapor Phase Epitaxy on Sapphire Substrate with Internally Focused Laser Processing [J] . Hideo Aida, Koji Koyama, Denis Martin, _Applied Physics Express . 2013,第3期

机译：内聚焦激光加工在蓝宝石衬底上通过氢化物气相外延生长厚的GaN层
4. HVPE growth of a thick GaN layer on a GaN templated (111) Si substrate [C] . Y. Nishimura, Y. Honda, M. Yamaguchi, International conference on nitride semiconductors . 2003

机译：GaN模板上的厚GaN层的HVPE生长（111）Si衬底
5. Heteroepitaxial Thick GaN Layers and Vertical High-Power Devices by Selective Area MOCVD Growth [D] . Tanaka, Atsunori. 2019

机译：通过选择性地区MOCVD生长的异膜厚GaN层和垂直大功率器件
6. Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE [O] . Nanliu Liu, Yongjing Jiang, Jian Xiao, 2021

机译：用HVPE使用组合缓冲层在蓝宝石上制造2英寸独立的GaN衬底
7. HVPE and MOVPE GaN growth on slightly misoriented sapphire substrates [O] . Olivier Parillaud, Volker Wagner, Hans-Jörg Bühlmann, 2000

机译：HVPE和Movpe GaN在略带误导的蓝宝石基板上的增长
8. A Microstructural Comparison of the Initial Growth of AIN and GaN Layers on Basal Plane Sapphire and SiC Substrates by Low Pressure Metalorganic Chemical Vapor Depositon [R] . George, T., Pike, W. T., Khan, M. A., 1994

机译：低压金属有机化学气相沉积法研究基面蓝宝石和siC衬底上alN和GaN层初始生长的微观结构比较

Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE

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