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首页> 外文期刊>Journal of Crystal Growth >Changes in morphology and growth rate of quasi-one-dimensional ZnSe nanowires on GaAs (100) substrates by metalorganic chemical vapor deposition
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Changes in morphology and growth rate of quasi-one-dimensional ZnSe nanowires on GaAs (100) substrates by metalorganic chemical vapor deposition

机译：金属有机化学气相沉积法在GaAs（100）衬底上准一维ZnSe纳米线的形貌和生长速率变化

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Different forms of zincblende ZnSe nanowires were obtained by metalorganic chemical vapor deposition on GaAs (1 0 0) substrates. The growth of the nanowires was greatly enhanced by depositing a thin ZnSe epilayer on the GaAs substrate and use of a 5 nm gold film sputtered on the epilayer. The dependence of growth rates and morphology of the nanowires on the growth pressure and temperature was studied systematically. For growth at a constant temperature of 550 degrees C, the optimum pressure was found to be around 50 Torr. For growth at a constant pressure of 100 Torr, the optimum temperature was around 520 degrees C. Several forms of nanowires were found to coexist. The fraction of each form in a sample was sensitive to temperature but not to pressure. As temperatures changed, one or two forms could dominate the sample. Short rod-like form growing along < 1 1 1 > occurred at low temperatures, longer wire-like form growing along < 1 1 0 > and blade-like form growing along < 1 1 2 > occurred at intermediate temperatures and nodular nanowires, resulting from overgrowth on wires and blades, appeared at high temperatures. Both the epitaxial nature and the direction of growth of the nanowires determined their preferred direction of alignment on the substrate. As the growth direction changed with temperature so did the alignment. (c) 2005 Elsevier B.V. All rights reserved.
机译：通过在GaAs（1 0 0）衬底上进行金属有机化学气相沉积，可获得不同形式的Znblende ZnSe纳米线。通过在GaAs衬底上沉积一层薄的ZnSe外延层并使用在该外延层上溅射的5 nm金膜，可以大大增强纳米线的生长。系统地研究了纳米线的生长速率和形态对生长压力和温度的依赖性。对于在550摄氏度的恒定温度下生长，发现最佳压力约为50托。对于在100托的恒定压力下生长，最佳温度约为520摄氏度。发现多种形式的纳米线共存。样品中每种形式的分数对温度敏感，但对压力不敏感。随着温度的变化，一种或两种形式可以主导样品。沿<1 1 1>生长的短杆状形式在低温下发生，沿<1 1 0>生长的较长线状形式和在<1 1 2>上生长的叶片状形式在中等温度下出现，且呈结节状纳米线。电线和刀片上的过度生长引起的高温下出现。纳米线的外延性质和生长方向都确定了其在基底上的优选取向方向。随着生长方向随温度变化，排列也随之变化。 （c）2005 Elsevier B.V.保留所有权利。

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