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首页> 外文期刊>Journal of Crystal Growth >Exploring optimum growth for high quality InAs/GaSb type-Ⅱ superlattices
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Exploring optimum growth for high quality InAs/GaSb type-Ⅱ superlattices

机译：探索高质量InAs / GaSbⅡ型超晶格的最佳生长

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摘要

Fundamental material issues in the growth of InAs/GaSb type-Ⅱ superlattice (SL) structures using molecular beam epitaxy (MBE) have been addressed. The effect of starting substrate surface morphology on buffer and SL layers was studied using a 51 A InAs/40 A GaSb SL structure. Epi-ready wafers from various manufacturers had significantly different influence on the quality of buffer and SL layers. Intrinsic defects in the substrate from different manufacturing processes formed unique defects in the buffer layer that propagated into and through the SL structure. The growth temperature of a buffer layer was an important factor especially in reducing the defect level in the SL structure as studied by transmission electron microscopy. Correlations of SL layer quality with photoresponse signal strength were made. During a strain balancing process, a dramatic structural degradation was observed with InSb interfaces (IFs) thickness beyond 1.0 monolayer. SL layers with poor structural quality caused by excessive InSb IFs showed zero photoresponse. High quality micron thick, InAs/GaSb SLs with a reduced lattice mismatch were routinely obtained by optimizing growth conditions.
机译：解决了使用分子束外延（MBE）生长InAs / GaSbⅡ型超晶格（SL）结构中的基本材料问题。使用51 A InAs / 40 A GaSb SL结构研究了起始衬底表面形态对缓冲层和SL层的影响。来自不同制造商的Epi-ready晶圆对缓冲层和SL层的质量影响显着不同。来自不同制造工艺的基板中的固有缺陷在缓冲层中形成了独特的缺陷，该缺陷传播到SL结构中并通过SL结构传播。如通过透射电子显微镜研究的，缓冲层的生长温度是特别重要的因素，特别是在降低SL结构中的缺陷水平方面。建立了SL层质量与光响应信号强度的关系。在应变平衡过程中，InSb界面（IFs）的厚度超过1.0个单层时，观察到了显着的结构退化。过量的InSb IF导致结构质量较差的SL层显示出零光响应。通过优化生长条件，可以常规获得具有减小的晶格失配的高质量微米厚的InAs / GaSb SL。

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