Single-crystalline Ge grown epitaxially on oxidized and reduced Ge/Si (100) islands

V. Zela; A. Gustafsson; W. Seifert

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Single-crystalline Ge grown epitaxially on oxidized and reduced Ge/Si (100) islands

机译：在氧化和还原的Ge / Si（100）岛上外延生长的单晶Ge

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In this paper, the Ge overgrowth of oxidized and reduced Ge/Si islands is studied. The islands were grown in a hot-wall ultrahigh vacuum chemical vapour deposition reactor. The oxidation was performed in air at room temperature and the reduction in a hydrogen atmosphere at 600℃. After reduction, Ge was deposited at the same temperature. The results of the overgrowth show that the reduced native oxide on top of the islands transfers the epitaxial information from the Si substrate to the epitaxial layer, whereas no growth takes place outside the Ge islands. This makes it possible to use these islands as crystal seeds for epitaxial lateral overgrowth for growing Ge layers on top of Si substrates.

机译：本文研究了氧化和还原的Ge / Si岛的Ge过度生长。这些岛在热壁超高真空化学气相沉积反应器中生长。在室温下在空气中进行氧化，在600℃下在氢气氛中还原。还原后，在相同温度下沉积Ge。过度生长的结果表明，岛顶上还原的天然氧化物将外延信息从Si衬底转移到外延层，而在Ge岛外没有生长。这使得可以将这些岛用作外延横向过生长的晶种，以在Si衬底的顶部上生长Ge层。

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来源
《Journal of Crystal Growth》 |2004年第4期|p.90-93|共4页
作者
V. Zela; A. Gustafsson; W. Seifert;
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作者单位

Department of Solid State Physics, University of Lund, P.O. Box 118, S221 00 Lund, Sweden;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1. nanostructures; A3. chemical vapor deposition processes; B1. germanium silicon alloys;

机译：A1。纳米结构;A3。化学气相沉积工艺;B1。锗硅合金;

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3. Surface morphology of Ge layers epitaxially grown on bare and oxidized Si(001) and Si(111) substrates [J] . A.A. Shklyaev, K.N. Romanyuk, S.S. Kosolobov Surface Science . 2014,第jula期

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4. Strain In Epitaxial Si/SiGe Graded Buffer Structures Grown On Si (100), Si(110) And Si (111) : A Raman Spectroscopy Study [C] . D. Rouchon, V. Destefanis, J.M. Hartmann, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices . 2008

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5. Microstructural investigation of defects in epitaxial gallium arsenide material grown on mismatched germanium and silicon-germanium/silicon substrates. [D] . Boeckl, John J. 2005

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6. X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates [O] . Peter Zaumseil, Grzegorz Kozlowski, Yuji Yamamoto, -1

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机译：通过H / Cl交换生长在Ge（100）上的外延Si膜

Single-crystalline Ge grown epitaxially on oxidized and reduced Ge/Si (100) islands

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