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Formation mechanism of local thickness profile of silicon epitaxial film

机译:硅外延膜局部厚度分布的形成机理

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摘要

From the viewpoint to obtain a very flat semiconductor silicon epitaxial film, the influence of an epitaxial reactor design on a local thickness profile of a silicon epitaxial film is studied. The characteristic thickness valleys formed in a trichlorosilane-hydrogen system using a horizontal cold wall single-wafer epitaxial reactor at atmospheric pressure are concluded to have a quantitative relationship with the local decrease in the transport rate of trichlorosilane induced by the increase in the velocity, the increase in the temperature and the decrease in the trichlorosilane concentration in the gas phase, which are induced by the gas inlet design.
机译:从获得非常平坦的半导体硅外延膜的观点出发,研究了外延反应器设计对硅外延膜的局部厚度分布的影响。结论是,在大气压下使用卧式冷壁单晶片外延反应器在三氯硅烷-氢系统中形成的特征厚度谷与速度增加引起的三氯硅烷传输速率的局部降低具有定量关系。进气口设计引起的温度升高和气相中三氯硅烷浓度的降低。

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