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首页> 外文期刊>Journal of Crystal Growth >The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well
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The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well

机译：插入应变补偿的GaNAs层对GaInNAs / GaAs量子阱的发光特性的影响

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摘要

Photoluminescence (PL) properties of GaInNAs/GaAs quantum wells (QWs) with strain-compensated GaNAs layers grown by molecular beam epitaxy are investigated. The temperature-dependent PL spectra of GalnNAs/GaAs QW with and without GaNAs layers are compared and carefully studied. It is shown that the introduction of GaNAs layers between well and barrier can effectively extend the emission wavelength, mainly due to the reduction of the barrier potential. The PL peak position up to 1.41 μm is observed at the room temperature. After adding the GaNAs layers into QW structures, there is no essential deterioration of luminescence efficiency. N-induced localization states are also not remarkably influenced. It implies that with optimized growth condition, high-quality GaInNAs/GaAs QWs with strain-compensated GaNAs layers can be achieved.
机译：研究了通过分子束外延生长具有应变补偿GaNAs层的GaInNAs / GaAs量子阱（QW）的光致发光（PL）特性。比较和仔细研究了具有和不具有GaNAs层的GalnNAs / GaAs QW随温度变化的PL光谱。结果表明，在阱和势垒之间引入GaNAs层可以有效地延长发射波长，这主要是由于势垒势的降低。在室温下观察到的PL峰位置高达1.41μm。将GaNAs层添加到QW结构中后，发光效率没有本质上的下降。 N诱导的定位状态也没有受到明显影响。这意味着通过优化生长条件，可以实现具有应变补偿GaNAs层的高质量GaInNAs / GaAs QW。

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