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首页> 外文期刊>Journal of inorganic and organometallic polymers and materials >Structural and Photoluminescence Properties of nc-SiO_x:H/a-SiO_x:H Multilayer Films Deposited at Low Temperature by VHF-PECVD Technique
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Structural and Photoluminescence Properties of nc-SiO_x:H/a-SiO_x:H Multilayer Films Deposited at Low Temperature by VHF-PECVD Technique

机译：NC-SiO_x的结构和光致发光性质：H / A-SiO_X：H通过VHF-PECVD技术在低温下沉积的多层膜

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摘要

Hydrogenated nanocrystalline silicon oxide/hydrogenated amorphous silicon oxide (nc-SiOx:H/a-SiOx:H) multilayer films were fabricated using very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique by alternate deposition of nc-SiOx:H and a-SiOx:H at a low substrate temperature of 220 degrees C. The effects of the amount of oxygen incorporation in the nc-SiOx:H sublayers on the structural and photoluminescence (PL) properties of nc-SiOx:H/a-SiOx:H multilayer films were investigated by transmission electron microscopy, Raman scattering, UV-VIS-NIR absorption spectra, steady and time-resolved PL spectra. As the amount of oxygen incorporation increases, the crystalline volume fraction of multilayer films decreases, while the intermediate-range order of multilayer films firstly increases and then decreases. Strong room temperature PL has been observed in the multilayer films and the correlation between structural and PL properties is discussed. This low-temperature procedure for fabricating nc-SiOx:H/a-SiOx:H multilayer films can provide powerful impetus for the further development of optoelectronic devices based on Si-NCs.
机译：使用非常高频等离子体增强的化学气相沉积（VHF-PECVD）技术，制造氢化纳米晶氧化硅/氢化非晶氧化硅（NC-SiOx：H / A-SiOx：H）多层膜，通过NC - SiOx：H和A-SiOx：H在低底物温度为220℃。氧气掺入量在NC-SiOx：H子层的结构和光致发光（PL）性质的影响：H. / A-SiOx：通过透射电子显微镜，拉曼散射，UV-Vis-Nir吸收光谱，稳态和时间分辨的PL光谱来研究H多层膜。随着氧气掺入的增加，多层膜的结晶体积分数降低，而多层膜的中间范围顺序首先增加然后减少。在多层薄膜中观察到强室温P1，并讨论了结构和PL度之间的相关性。该用于制造NC-SiOx的低温方法：H / A-SiOx：H多层薄膜可以为基于Si-NC的光电器件进一步发展提供强大的推动力。

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  • 作者

    Gao Dongze; Li Yun; Zhang Bohui; Wang Xinzhan; Lu Wanbing; Liu Haixu; Cong Ridong; Yu Wei; Fu Guangsheng;

  • 作者单位

    Hebei Univ Coll Phys Sci & Technol Hebei Key Lab Opt Elect Informat & Mat Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci & Technol Hebei Key Lab Opt Elect Informat & Mat Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci & Technol Hebei Key Lab Opt Elect Informat & Mat Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci & Technol Hebei Key Lab Opt Elect Informat & Mat Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci & Technol Hebei Key Lab Opt Elect Informat & Mat Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci & Technol Hebei Key Lab Opt Elect Informat & Mat Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci & Technol Hebei Key Lab Opt Elect Informat & Mat Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci & Technol Hebei Key Lab Opt Elect Informat & Mat Baoding 071002 Peoples R China;

    Hebei Univ Coll Phys Sci & Technol Hebei Key Lab Opt Elect Informat & Mat Baoding 071002 Peoples R China;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    Hydrogenated nanocrystalline silicon oxide; VHF-PECVD; Multilayer films; Photoluminescence;

    机译：氢化纳米晶型氧化硅;VHF-PECVD;多层薄膜;光致发光;

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