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首页> 外文期刊>Journal of Materials Research >In situ stress measurements during direct MOCVD growth of GaN on SiC
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In situ stress measurements during direct MOCVD growth of GaN on SiC

机译：在SiC上直接MOCVD生长GaN期间的原位应力测量

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摘要

In situ curvature measurements were used to compare the stress evolution of GaN films grown directly on 6H-SiC via a two-step temperature growth to films grown with an AlN buffer layer. The two-step temperature growth consisted of an initial low-temperature and a main high-temperature GaN layer. In the case of GaN grown directly on 6H-SiC, the high-temperature layer initiated growth under compressive stress which transitioned to tensile stress. Films grown directly on 6H-SiC exhibited a reduction in the threading dislocation (TD) density and an improvement in the surface roughness compared to growth on the AlN buffer layer. Furthermore, transmission electron microscopy of the GaN grown directly on 6H-SiC revealed predominant (a + c)-type TD along with basal plane stacking faults and {1120} prismatic stacking faults. Channeling cracks were observed in the GaN film when the AlN buffer layer was not utilized. This was attributed to tensile stress induced from the thermal expansion coefficient mismatch.
机译：使用原位曲率测量来比较通过两步温度增长直接在6H-SiC上生长的GaN膜与通过AlN缓冲层生长的膜的应力演变。两步温度增长由初始低温层和主高温GaN层组成。在6H-SiC上直接生长GaN的情况下，高温层在压应力下开始生长，该压应力转变为拉应力。与在AlN缓冲层上生长相比，直接在6H-SiC上生长的膜表现出的螺纹位错（TD）密度降低，表面粗糙度提高。此外，直接在6H-SiC上生长的GaN的透射电子显微镜显示出主要的（a + c）型TD以及基面堆叠断层和{1120}棱柱形堆叠断层。当不使用AlN缓冲层时，在GaN膜中观察到沟道裂纹。这归因于由热膨胀系数不匹配引起的拉伸应力。

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  • 来源
    《Journal of Materials Research》 |2015年第19期|2900-2909|共10页
  • 作者

    Zakaria Y. Al Balushi; Joan M. Redwing;

  • 作者单位

    Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA;

    Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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