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首页> 外文期刊>Journal of Materials Research >Mechanism of electromigration-induced failure in flip-chip solder joints with a 10-nm-thick Cu under-bump metallization
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Mechanism of electromigration-induced failure in flip-chip solder joints with a 10-nm-thick Cu under-bump metallization

机译：厚度为10 nm的凸点下铜金属化的倒装芯片焊点中的电迁移诱导失效机理

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摘要

The electromigration-induced failure in flip-chip eutectic SnPb solder joints with a 10-μm-thick Cu under-bump metallization (UBM) was studied without the effect of current crowding in the solder region. The current crowding occurred inside the UBM instead of in the solder joint at the current density of 3.0 x 10~4 A/cm~2 because of the spreading of current in the very thick Cu UBM. In these joints, the failure occurred through a two-stage consumption of the thick Cu UBM in the joint where electrons flowed from the chip to the substrate. In the first stage, the Cu UBM dissolved layer by layer rather uniformly across the entire Cu UBM-solder interface. In the second stage, after half of the Cu UBM was dissolved, an asymmetrical dissolution of Cu UBM took place at the corner where electrons entered from the Al interconnect to the Cu UBM. Experimental observation of dissolution steps of the 10-μm-thick Cu UBM is presented. The transition from the first stage to the second stage has been found to depend on the location of current crowding in the flip-chip joints as the UBM thickness changes during the electromigration test. The current distribution in the flip-chip solder joints as a function of UBM thickness was simulated by three-dimensional finite element analysis. The dissolution rate of Cu UBM in the second stage was faster than that in the first stage. The mechanism of electromigration-induced failure in the flip-chip solder joints with a 10-μm-thick Cu UBM is discussed.
机译：研究了具有10μm厚的铜凸点下金属化（UBM）的倒装芯片共晶SnPb焊点中的电迁移引起的失效，而没有电流在焊区中拥挤。由于电流在非常厚的Cu UBM中扩散，电流拥挤发生在UBM内部而不是焊点中，电流密度为3.0 x 10〜4 A / cm〜2。在这些接头中，故障是通过接头中两步消耗厚的铜UBM发生的，其中电子从芯片流向基板。在第一阶段，Cu UBM在整个Cu UBM-焊料界面上逐层均匀地溶解。在第二阶段中，在一半的UBM溶解后，电子从Al互连线进入UBM的角落发生了UUB的不对称溶解。给出了10μm厚Cu UBM溶解步骤的实验观察。已经发现，从第一阶段到第二阶段的过渡取决于电流迁移在倒装芯片接头中拥挤的位置，因为电迁移测试期间UBM厚度会发生变化。通过三维有限元分析，模拟了倒装芯片焊点中电流的分布与UBM厚度的关系。第二阶段Cu UBM的溶解速率比第一阶段快。讨论了厚度为10μm的Cu UBM的倒装芯片焊点中电迁移引起的失效的机理。

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