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首页> 外文期刊>Journal of Materials Research >Effect of oxygen inclusion on microstructure and thermal stability of copper nitride thin films
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Effect of oxygen inclusion on microstructure and thermal stability of copper nitride thin films

机译：含氧量对氮化铜薄膜微观结构和热稳定性的影响

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摘要

Copper oxynitride thin films with a minor oxygen content were prepared on silicon wafers at 100 ℃ by reactive magnetron sputtering using a gas mixture of nitrogen and oxygen. Addition of oxygen immediately improves the compactness of the deposits, which otherwise comprise ragged Cu_3N nanocrystallites. With an oxygen content ＜ 10.0 at.%, the deposits reveal some sporadic Cu_2O nanocrystals under transmission electron microscopy, but their x-ray diffraction (XRD) patterns exhibit reflections only from the Cu_3N phase. The decomposition temperature, at which the sample after prolonged annealing shows Cu reflections on its XRD pattern, can be raised from 300 ℃ for stoichiometric Cu_3N to 360 ℃. The decomposition product after annealing at 450 ℃ is pure copper having an electrical resistivity of 8.94 × 10~(-8) Ω·m at room temperature, which can be taken as a good conductor and stands in strong contrast with the oxynitride matrix with an electrical resistivity of 6.87 × 10~(-2) Ω·m. These results constitute progress in the search of directly writable copper nitride-based materials.
机译：在100℃的硅片上，通过反应磁控溅射，使用氮气和氧气的混合气体，制备了氧含量较低的氮氧化铜薄膜。氧气的添加立即改善了沉积物的致密性，否则沉积物包括参差不齐的Cu_3N纳米微晶。氧含量＜10.0 at。％的沉积物在透射电子显微镜下显示出一些零星的Cu_2O纳米晶体，但它们的X射线衍射（XRD）图谱仅显示来自Cu_3N相的反射。长时间退火后的样品在XRD图上显示出Cu反射的分解温度可以从化学计量Cu_3N的300℃提高到360℃。在450℃退火后的分解产物是室温下电阻率为8.94×10〜（-8）Ω·m的纯铜，可作为良好的导体，与氮氧化物基质形成鲜明对比。电阻率为6.87×10〜（-2）Ω·m。这些结果构成了对可直接写入的氮化铜基材料的研究进展。

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