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首页> 外文期刊>Journal of Materials Research >Evidence for extensive grain boundary meander and overgrowth of substrate grain boundaries in high critical current density ex situ YBa2Cu3O7-x coated conductors
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Evidence for extensive grain boundary meander and overgrowth of substrate grain boundaries in high critical current density ex situ YBa2Cu3O7-x coated conductors

机译：YBa2Cu3O7-x涂层导体中高临界电流密度下广泛的晶界弯曲和基体晶界过度生长的证据

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摘要

It has been generally accepted that YBa2Cu3O7-x (YBCO) films deposited on deformation textured polycrystalline metal tapes result in YBCO grain boundary (GB) networks that essentially replicate the GBs of the underlying substrate. Here we report that for thicker YBCO films produced by a BaF2 ex situ process, this is not true. Using electron backscatter diffraction combined with ion milling, we have been able to map the evolution of the YBCO grain structure and compare it to the underlying template in several coated conductors. For thin (<= 0.5 mu m) YBCO films deposited on rolling-assisted biaxially textured substrates (RABiTS), the YBCO GBs nearly directly overlap the substrate GBs. For 0.7-1.4 mu m YBCO films, the GBs were found to meander along the substrate GBs and along the sample normal, with displacements several times the film thickness. In very thick films (2.5-2.9 mu m), the YBCO grains can completely overgrow substrate grains and GBs, resulting in a substantial disconnection of the YBCO and substrate GB networks. Similar behavior is found for BaF2 ex situ YBCO films on ion-beam-assisted deposition-type templates. The ability of the YBCO to overgrow substrate grains and GBs is believed to be due to liquid-phase mediated laminar grain growth. Although the behavior of the YBCO GB networks changes with YBCO film thickness, the samples maintained high critical current density (J(c)) values of >2 MA/cm(2) for films up to 1.4 mu m thick, and up to 0.9 MA/cm(2) for 2.5-2.9-mu m-thick films.
机译：公认的是，沉积在变形织构化多晶金属带上的YBa2Cu3O7-x（YBCO）膜会产生YBCO晶界（GB）网络，该网络基本上复制了下层基板的GB。在这里，我们报道对于通过BaF2非原位工艺生产的较厚的YBCO薄膜，这是不正确的。使用电子背散射衍射结合离子铣削，我们已经能够绘制出YBCO晶粒结构的演变图，并将其与几种涂层导体中的底层模板进行比较。对于沉积在滚动辅助双轴纹理化基材（RABiTS）上的薄（<= 0.5μm）YBCO薄膜，YBCO GB几乎直接与基材GB重叠。对于0.7-1.4μm的YBCO膜，发现GB沿着基底GB和样品法线弯曲，位移是膜厚度的几倍。在非常厚的薄膜（2.5-2.9微米）中，YBCO晶粒会完全使基底晶粒和GB过度生长，从而导致YBCO和基底GB网络的实质性断开。对于离子束辅助沉积型模板上的BaF2异位YBCO膜，发现了类似的行为。认为YBCO使基质晶粒和GB过度生长的能力是由于液相介导的层状晶粒生长。尽管YBCO GB网络的行为随YBCO膜厚度的变化而变化，但对于厚度最大为1.4μm且最大为0.9的膜，样品仍保持> 2 MA / cm（2）的高临界电流密度（J（c））值厚度为2.5-2.9微米的MA / cm（2）。

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