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首页> 外文期刊>Journal of Materials Research >Deposition and characterization of HfO_2 high k dielectric films
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Deposition and characterization of HfO_2 high k dielectric films

机译：HfO_2高k介电膜的沉积与表征

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摘要

As the scaling of complementary metal-oxide-semiconductor (CMOS) transistors proceeds, the thickness of the SiO_2 gate dielectrics shrinks rapidly and results in higher gate leakage currents. High k dielectric materials are acknowledged to be the possible solutions to this challenge, as their higher k values (e.g., 15-50) raise the physical thickness of the dielectrics that provide similar equivalent thickness of a thinner SiO_2 film. In order for the high k materials to be applicable in CMOS devices, there should exist deposition technologies that can deposit highly uniform films over Si wafers with diameters as large as 200 mm. This report discusses the deposition process and the correlation between the growth conditions, structural and dielectric properties of HfO_2, which is one of the most promising high k dielectric materials. Judging from the thickness uniformity, surface roughness, k value, and interfacial density of state of the HfO_2 films, the metalorganic chemical vapor deposition technique was identified to be suitable for growing HfO_2 films targeted at applications as CMOS gate dielectrics.
机译：随着互补金属氧化物半导体（CMOS）晶体管按比例缩小的发展，SiO_2栅极电介质的厚度迅速缩小，并导致更高的栅极泄漏电流。高k电介质材料被认为是解决该挑战的可能解决方案，因为它们的更高的k值（例如15-50）提高了电介质的物理厚度，该电介质的物理厚度与更薄的SiO_2膜的等效厚度相同。为了使高k材料适用于CMOS器件，应该存在能够在直径高达200 mm的Si晶片上沉积高度均匀的膜的沉积技术。本报告讨论了HfO_2的沉积工艺以及生长条件，结构和介电性能之间的相关性，HfO_2是最有前途的高k介电材料之一。从HfO_2薄膜的厚度均匀性，表面粗糙度，k值和界面界面密度来看，金属有机化学气相沉积技术被认为适合于生长目标为CMOS栅极电介质的HfO_2薄膜。

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