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首页> 外文期刊>Journal of Materials Research >Growth, microstructure, charge transport, and transparency of random polycrystalline and heteroepitaxial metalorganic chemical vapor deposition-derived gallium-indium-oxide thin films
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Growth, microstructure, charge transport, and transparency of random polycrystalline and heteroepitaxial metalorganic chemical vapor deposition-derived gallium-indium-oxide thin films

机译：随机多晶和异质外延金属有机化学气相沉积衍生的镓铟氧化物薄膜的生长，微结构，电荷传输和透明度

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摘要

Gallium-indium-oxide films (Ga_xIn_(2-x)O_3), where x = 0.0-1.1, were grown by low-pressure metalorganic chemical vapor deposition using the volatile metalorganic precursors In(dpm)_3 and Ga(dpm)_3 (dpm = 2,2,6,6-tetramethyl-3,5-heptanedionato). The films were smooth (root mean square roughness = 50-65 A) with a homogeneously Ga-substituted, cubic In_2O_3 microstructure, randomly oriented on quartz or heteroepitaxial on (100) yttria-stabilized zirconia single-crystal substrates. The highest conductivity of the as-grown films was found at x = 0.12, with σ = 700S/cm [n-type; carrier density = 8.1 x 10~(19) cm~(-3); mobility = 55.2 cm~2/(V s); da/dr < 0]. The optical transmission window of such films is considerably broader than that of Sn-doped In_2O_3, and the absolute transparency rival or exceeds that of the most transparent conductive oxides known. Reductive annealing, carried out at 400-425℃ in a flowing gas mixture of H_2 (4%) and N_2, resulted in increased conductivity (σ = 1400 S/cm; n-type), carrier density (1.4 x 10~(20)cn~(-3)), and mobility as high as 64.6 cm~2/(V s), wfth little loss in optical transparency. No significant difference in carrier mobility or conductivity is observed between randomly oriented and heteroepitaxial films, arguing in combination with other data that carrier scattering effects at high-angle grain/domain boundaries play a minor role in the conductivity mechanism.
机译：使用挥发性金属有机前驱体In（dpm）_3和Ga（dpm）_3通过低压金属有机化学气相沉积法生长了x = 0.0-1.1的镓铟氧化物薄膜（Ga_xIn_（2-x）O_3）（ dpm ＝ 2,2,6,6-四甲基-3,5-庚二酮基。薄膜是光滑的（均方根粗糙度= 50-65 A），具有均质的Ga取代的立方In_2O_3微观结构，在石英上随机取向，或在（100）氧化钇稳定的氧化锆单晶衬底上异质外延。发现新成膜的最高电导率在x = 0.12，σ= 700S / cm [n-type;载流子密度= 8.1 x 10〜（19）cm〜（-3）;迁移率= 55.2 cm〜2 /（V s）; da / dr <0]。这样的膜的光学透射窗比掺Sn掺杂的In_2O_3的光学透射窗大得多，并且绝对透明性与已知的最透明的导电氧化物相当或超过。在流动的H_2（4％）和N_2的混合气体中于400-425℃进行的还原退火导致电导率（σ= 1400 S / cm; n型），载流子密度（1.4 x 10〜（20） ）〜（-3）），迁移率高达64.6 cm〜2 /（V s），光学透明性几乎没有损失。在随机取向的薄膜和异质外延薄膜之间，没有观察到载流子迁移率或电导率的显着差异，并与其他数据相结合，认为在高角度晶粒/畴边界处的载流子散射效应在电导率机制中的作用很小。

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