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首页> 外文期刊>Journal of Materials Research >Growth-rate dependence of the thermal conductivity of chemical-vapor-deposited diamond
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Growth-rate dependence of the thermal conductivity of chemical-vapor-deposited diamond

机译：化学气相沉积金刚石热导率的增长率依赖性

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摘要

The in-plane thermal diffusivity of chemical-vapor-deposited diamond films was measured as a function of diamond-growth rate. The films, 0. l-0.4 mm thick, were prepared in microwave-plasma reactor at growth rates ranging from l to l0 mu m/h. A modification of Angstrom's method was used to perform the diffusivity measurements. The thermal conductivity calculated from the thermal diffusivity shows an inverse relationship with growth rate. Analyses of Raman spectra indicate that both the line shifts and the line widths of the diamond Raman peak are practically independent of the deposition rate, except for the specimen grown at the highest growth rate.
机译：测量了化学气相沉积金刚石膜的面内热扩散率与金刚石生长速率的关系。在微波等离子体反应器中以0-1至10μm/ h的生长速率制备厚度为0.1-0.4mm的膜。使用Angstrom方法的一种改进方法来进行扩散率测量。由热扩散率计算出的热导率与增长率成反比关系。拉曼光谱的分析表明，除了以最高生长速率生长的样品外，金刚石拉曼峰的线位移和线宽实际上都与沉积速率无关。

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