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首页> 外文期刊>Journal of Materials Science. Materials in Electronics >Growth and characterization of HfO_(2) high-k gate dielectric films by laser molecular beam epitaxy (LMBE)
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Growth and characterization of HfO_(2) high-k gate dielectric films by laser molecular beam epitaxy (LMBE)

机译：HfO_（2）高k栅介质膜的激光分子束外延（LMBE）生长和表征

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摘要

The HfO_(2) gate dielectric films were fabricated by the laser molecular beam epitaxy (LMBE) technique. High-resolution transmission electron microscopy (HRTEM) observation showed that under optimized condition, there is no detectable SiO_(2) interfacial layer in the as-deposited film and a SiO_(2) interfacial layer of about 0.4 nm was formed at the Si interface due to the post deposition annealing. Capacitance-voltage (C-V) measurement of the film revealed that the equivalent oxide thickness was about 1.3 nm. Such a film showed very low leakage current density of 1.5 X 10~(-2) A cm~(-2) at 1 V gate bias from the current-voltage (I-V) analysis. The conduction mechanisms as a function of temperature T and electric field E were also systematically studied.
机译：通过激光分子束外延（LMBE）技术制备了HfO_（2）栅介质膜。高分辨率透射电子显微镜（HRTEM）观察表明，在最佳条件下，沉积膜中没有可检测到的SiO_（2）界面层，并且在Si界面形成了约0.4 nm的SiO_（2）界面层。由于后沉积退火。膜的电容电压（C-V）测量显示等效氧化物厚度为约1.3nm。根据电流-电压（I-V）分析，在1 V栅极偏压下，这种薄膜的泄漏电流密度非常低，仅为1.5 X 10〜（-2）A cm〜（-2）。还系统地研究了随温度T和电场E变化的传导机理。

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