Electrical properties of as-grown molecular beam epitaxy high-k gate dielectrics deposited on silicon

A. Goldenblum; I. Pintilie; M. Buda; A. Popa; M. Lisca; T. Botila; V. Teodorescu; A. Dimoulas; G. Vellianitis

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Electrical properties of as-grown molecular beam epitaxy high-k gate dielectrics deposited on silicon

机译：沉积在硅上的分子束外延生长高k栅极电介质的电学性质

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The carrier transport mechanisms in as-grown LaAlO_3 and La_2Hf_2O_7 high-k insulator layers deposited on n- and p-Si were deduced from temperature dependent C-V and Ⅰ-Ⅴ characteristics correlated with photoelectric measurements. Large, parallel shifts in the high frequency C-V curves are explained by the presence of a large density of interface states and an approximate analytical formula relating the density of states to the C-V shift is deduced. The space charge limited current is explained by the existence of impurity channels situated energetically near the conduction or valence band of silicon.

机译：从与温度相关的C-V和与光电测量相关的Ⅰ-Ⅴ特性推导出了沉积在n-和p-Si上的LaAlO_3和La_2Hf_2O_7高k绝缘体层中的载流子传输机理。高频C-V曲线中出现较大的平行位移，这是由于界面状态的密度较大而引起的，并推导出了将状态密度与C-V位移相关的近似分析公式。空间电荷限制电流由在能量上靠近硅的导带或价带的杂质通道的存在来解释。

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来源
《Journal of Applied Physics》 |2006年第6期|p.064105.1-064105.9|共9页
作者
A. Goldenblum; I. Pintilie; M. Buda; A. Popa; M. Lisca; T. Botila; V. Teodorescu; A. Dimoulas; G. Vellianitis;
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作者单位

National Institute of Materials Physics, Atomistilor Street 105 bis, P.O. Box MG7, Magurele-Bucuresti 77125, Romania;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;计量学;
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Electrical properties of as-grown molecular beam epitaxy high-k gate dielectrics deposited on silicon

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