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Experimental and theoretical investigation of bifurcated wafer warpage evolution in the wafer level packaging processes

机译:晶圆级包装工艺中分叉晶圆翘曲演化的实验与理论研究

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摘要

Wafer warpage, which mainly originated from thermal mismatch between the materials, has become serious in wafer level packaging (WLP) as larger diameter and thinner wafers are required currently. In this paper, three-dimensional wafer warpage profile and the warpage evolution during typical fan-in WLP processes including wafer thinning process were characterized in situ. Special attention was paid to the bifurcated phenomenon. Prior to the wafer thinning process, the wafer deformed into a bowl shape which was caused by polyimide (PI) curing. A distinct bifurcation behavior appeared and the wafer warped into a cylindrical shape when the wafer was thinned below 270 μm. This bifurcation behavior was systematically analyzed by theoretical analysis and finite element analysis (FEA). Equivalent material model method and perturbation method were employed to simplify the FEA model and incur the bifurcation behavior, respectively.
机译:晶圆翘曲,主要源于材料之间的热失配,在晶圆级包装(WLP)中已经严重,因为目前需要更大的直径和更薄的晶片。在本文中,在包括晶片变薄过程的典型风扇过程中的三维晶片翘曲型材和翘曲演化在包括晶片细化过程的过程中。特别注意分叉现象。在晶片稀释过程之前,晶片变形成由聚酰亚胺(PI)固化引起的碗状。当晶片在270μm以下变薄时,出现明显的分叉行为并且晶片翘曲成圆柱形状。通过理论分析和有限元分析(FEA)系统地分析了这种分叉行为。使用等效材料模型方法和扰动方法,以简化FEA模型并促进分叉行为。

著录项

  • 来源
    《Journal of materials science》 |2020年第19期|16531-16538|共8页
  • 作者

    Chunsheng Zhu;

  • 作者单位

    Strategic Support Force Information Engineering University Zhengzhou 450001. China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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