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首页> 外文期刊>Journal of microanolithography, MEMS, and MOEMS >Application of E-beam hot spot inspection for early detection of systematic patterning problems to a FinFET technology
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Application of E-beam hot spot inspection for early detection of systematic patterning problems to a FinFET technology

机译：电子束热点检查在FinFET技术的早期检测系统构图问题中的应用

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摘要

Early in-line detection of systematic patterning problems in technology development can dramatically improve a technology's chance for success. By uncovering layout geometries that are difficult to implement, prompt action may be taken so that solutions are in place well before product chips that contain these and similar patterns enter the manufacturing line. If a solution is not in place, this could spell disaster for the product and perhaps even the technology. Ideally, product chips will work on the first lot, which is referred to as "first time right." To help ensure this, a methodology for in-line detection of systematic patterning problems using E-beam hot spot inspection (EBHI) was developed. We review this methodology, including the latest enhancements. Pattern simulation tools and other sources are used to provide die locations with challenging geometries for evaluation. EBHI evaluates the patterning capability for these locations using modulated wafers. A multifunction team addresses any hot spots that fail within the process window. EBHI is then used to evaluate the solutions proposed by this team. Application of this methodology to a fin-shaped field effect transistor technology is described using examples from the fin and back end of line modules. These examples illustrate the full range of actions used to resolve patterning issues.
机译：早期在线检测技术开发中的系统构图问题可以极大地提高技术的成功机会。通过发现难以实现的布局几何形状，可以采取迅速的措施，以便在包含这些和类似图案的产品芯片进入生产线之前就已经有解决方案。如果没有适当的解决方案，这可能会给产品甚至技术带来灾难。理想情况下，产品芯片将在第一批上工作，这被称为“第一次正确”。为了确保这一点，开发了一种使用电子束热点检查（EBHI）在线检测系统构图问题的方法。我们回顾了这种方法，包括最新的增强功能。图案仿真工具和其他来源可用于为芯片位置提供具有挑战性的几何形状以进行评估。 EBHI使用调制晶片评估这些位置的图案形成能力。多功能团队可以解决在过程窗口内失败的所有热点。然后使用EBHI评估该团队提出的解决方案。使用来自鳍片和线路模块后端的示例描述了该方法在鳍形场效应晶体管技术中的应用。这些示例说明了用于解决模式问题的全部操作。

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  • 来源
    《Journal of microanolithography, MEMS, and MOEMS》 |2015年第2期|021106.1-021106.7|共7页
  • 作者

    Deborah A. Ryan; Oliver D. Patterson; Shuen-Cheng Chris Lei; David Conklin; Jim Liang; Glenn Biery; Atsushi Ogino; Bachir Dirahoui; Zachary Baum; Mike D. Monkowski;

  • 作者单位

    IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533, United States;

    IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533, United States;

    Hermes Microvision Inc., 1762 Automation Parkway, San Jose, California 95131, United States;

    IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533, United States;

    IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533, United States;

    IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533, United States;

    IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533, United States;

    IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533, United States;

    IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533, United States;

    IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533, United States;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    hot spot inspection; E-beam inspection; optical proximity correction; pattern fidelity; FinFET; patterning issues;

    机译：热点检查;电子束检查;光学邻近校正模式逼真度FinFET;模式问题;

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