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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Polysilicon metal-insulator-semiconductor electron emitter
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Polysilicon metal-insulator-semiconductor electron emitter

机译：多晶硅金属绝缘体半导体电子发射极

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The flat metal-insulator-semiconductor (MIS) electron emitter is a simple design, allowing easy manufacture. The emitters are relatively insensitive to environment, allowing them to operate in poorer vacuum conditions than are necessary for oxide thermionic or microtip field emitters. In most literature reports, MIS and metal-insulator-metal devices are limited in, emission current ( < 0.001 A/cm~2) by their low efficiencies ( 0.1%). We have observed emission currents as high as 2-10 A/cm~2 at efficiencies from 3%-10%. Our best results are from emitters comprised of 5-7.5 nm gold/15 nm SiO_2/100 nm polysilicon~(++) doped silicon substrate. The roles of each component of the flat emitter were investigated. The polysilicon serves a dual role: Bumps on its surface act as field-enhanced emission sites while the bulk of the film behaves as a self-adjusting ballast resistor preventing run away emission from any one emission site. The thin gold layer self-assembles into a nanomesh with > 400 pores/μm~2 through which electrons are emitted. Energy distribution and angular divergence of emitted electrons were measured. A coherent explanation of emission including the origination of the divergence is presented. Pros and cons of the MIS emitter and potential application are discussed.
机译：扁平金属-绝缘体-半导体（MIS）电子发射器设计简单，易于制造。发射器对环境相对不敏感，从而使其可以在比氧化物热电子或微尖端场发射器所需的更差的真空条件下运行。在大多数文献报告中，MIS和金属-绝缘体-金属器件的发射电流（<0.001 A / cm〜2）受其低效率（ 0.1％）的限制。我们观察到在3％-10％的效率下发射电流高达2-10 A / cm〜2。我们的最佳结果来自于由5-7.5 nm金/ 15 nm SiO_2 / 100 nm多晶硅/ n〜（++）掺杂的硅衬底组成的发射极。研究了平面发射器的每个组件的作用。多晶硅具有双重作用：其表面上的凸点起着增强电场的作用，而薄膜的大部分起自调节镇流电阻的作用，可防止任何一个发射点的发射失控。薄的金层自组装成具有大于400个孔/μm〜2的纳米网，通过该网可以发射电子。测量了发射电子的能量分布和角发散。提出了对发射的连贯解释，包括发散的起源。讨论了MIS发射器的优缺点和潜在应用。

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