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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Thermal stability of trimethylsilylated mesoporous silica thin films as the ultralow-k dielectric for copper interconnects
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Thermal stability of trimethylsilylated mesoporous silica thin films as the ultralow-k dielectric for copper interconnects

机译：三甲基甲硅烷基化介孔二氧化硅薄膜作为铜互连的超低k电介质的热稳定性

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摘要

Surfactant templated mesoporous silica thin films were prepared as the intermetal dielectric for ultralarge scaled integrated circuit application, and the thermal and chemical stability of the Cuitrided Ta/mesoporous silica film stack on the Si wafer was studied. Trimethylsilylation of the mesoporous silica thin film by hexamethyldisilazane vapor treatment significantly improves hydrophobicity of the mesoporous dielectric, and a dielectric constant (k) smaller than 2 can be obtained for the thin film. According to Fourier transform infrared spectroscopy and thermal desorption spectroscopy, decomposition of trimethylsilyl groups on the pore surface becomes significant at temperatures larger than 400℃. However, when the metallized film stack was annealed at temperatures higher than 400℃, the film stack shows little delamination between layers and still retains smooth interfaces according to Auger electron spectroscopy and transmission electron microscopy analyses. Ta_2C nanoparticles were found to exist at the Ta(N)/mesoporous silica interface of the film stack annealed at 600℃. Bias-temperature stress test of the metallized film stack shows little Cu diffusion into the mesoporous dielectric layer.
机译：制备了表面活性剂模板的介孔二氧化硅薄膜作为金属间介电层，用于超大规模集成电路应用，并研究了硅晶片上的铜/氮化钽/介孔二氧化硅薄膜叠层的热稳定性和化学稳定性。通过六甲基二硅氮烷蒸气处理对中孔二氧化硅薄膜进行三甲基甲硅烷基化显着改善了中孔介电质的疏水性，并且对于该薄膜可以获得小于2的介电常数（k）。根据傅立叶变换红外光谱法和热脱附光谱法，在高于400℃的温度下，孔表面三甲基甲硅烷基的分解变得显着。然而，根据俄歇电子能谱和透射电子显微镜分析，当金属化的薄膜叠层在高于400℃的温度下退火时，薄膜叠层之间几乎没有分层，并且仍保持光滑的界面。发现Ta_2C纳米粒子存在于600℃退火的薄膜叠层的Ta（N）/介孔二氧化硅界面。金属化膜叠层的偏压温度应力测试显示几乎没有铜扩散到中孔介电层中。

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