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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics Processing and Phenomena >Liquid immersion lens technology applied to laser voltage probing of 130 nm process technology devices
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Liquid immersion lens technology applied to laser voltage probing of 130 nm process technology devices

机译:液浸透镜技术应用于130 nm工艺技术设备的激光电压探测

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摘要

Liquid immersion lens technology has been applied to internal-node, through-silicon probing of 130 nm integrated circuits. A 100X, 1.3 numerical aperture (NA) objective with 100μm working distance was specifically designed for this application. An optical resolution of 500 nm is achieved using 1064 nm wavelength light, ≈30% improvement over the standard, air immersion, 0.85 NA lens currently used. Significant improvements in wave form quality were also achieved. A >2X signal to noise ratio improvement is demonstrated on 130 nm technology devices. Probing of 90 nm technology devices indicate that laser voltage probing with liquid immersion lens technology and phase-sensitive detection is extensible to this process node.
机译:液浸透镜技术已应用于130 nm集成电路的内部节点直通硅探测。为此应用专门设计了工作距离为100μm的100X,1.3数值孔径(NA)物镜。使用1064 nm波长的光可实现500 nm的光学分辨率,比目前使用的标准空气浸没0.85 NA透镜提高≈30%。波形质量也得到了显着改善。在130 nm技术设备上证明了> 2倍的信噪比改善。对90 nm技术设备的探测表明,采用液浸透镜技术和相敏检测的激光电压探测可扩展到该工艺节点。

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