...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Vacuum Science & Technology >Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors
【24h】

Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors

机译：氮化硅钝化对algan / gan高电子迁移率晶体管中隔离阻挡电压的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The effects of plasma enhanced vapor deposited silicon nitride (SiN_x) passivation layer thickness and the spacing between the contact windows openings in the SiNx layer on the isolation-blocking voltage of nitrogen ion implanted AlGaN/GaN high electron mobility transistors were studied. The isolation-blocking voltage was proportional to the thickness of the SiN_x passivation layer. Early breakdown was observed for the samples without thick enough SiNx due to surface breakdown. The device was permanently damaged after the occurrence of this early breakdown. The dependence of the isolation-blocking voltage on the SiN_x thickness was also modeled and the general trends of the simulated results were in good agreement with the experiment data. The effect of rf power used for depositing the SiN_x layer on the isolation-blocking voltage was also studied. Ion bombardments during the SiN_x deposition could cause the reduction of breakdown voltage. By employing optimized SiN_x passivation conditions, a saturation drain current and a drain breakdown voltage of 300 mA/mm and 1000 V, respectively, for HEMTs with gate dimension of 1 X 200 /urn2 and gate to drain distance of 37.5 /mm were achieved.
机译：研究了等离子体增强的气相沉积氮化硅（SiN_x）钝化层的厚度以及SiNx层中接触窗开口之间的间距对注入氮离子的AlGaN / GaN高电子迁移率晶体管的隔离阻挡电压的影响。隔离阻挡电压与SiN_x钝化层的厚度成比例。对于由于表面击穿而没有足够厚的SiNx的样品，观察到早期击穿。发生此早期故障后，该设备被永久损坏。还对隔离阻挡电压对SiN_x厚度的依赖关系进行了建模，仿真结果的总体趋势与实验数据吻合良好。还研究了用于沉积SiN_x层的射频功率对隔离阻挡电压的影响。 SiN_x沉积过程中的离子轰击可能会导致击穿电压降低。通过采用优化的SiN_x钝化条件，对于栅极尺寸为1 X 200 / urn2且栅极至漏极距离为37.5 / mm的HEMT，饱和漏极电流和漏极击穿电压分别达到300 mA / mm和1000V。

著录项

  • 来源
    《Journal of Vacuum Science & Technology》 |2011年第3期|p.031211.1-031211.5|共5页
  • 作者

    Chien-Fong Lo; T. S. Kang; L. Liu; F. Ren; S. J. Pearton; Jinhyung Kim; S. Jang; O. Laboutin; Y. Cao; J. W. Johnson;

  • 作者单位

    Department of Chemical Engineering, University of Florida, Gainesville FL 32611;

    Department of Chemical Engineering, University of Florida, Gainesville FL 32611;

    Department of Chemical Engineering, University of Florida, Gainesville FL 32611;

    Department of Chemical Engineering, University of Florida, Gainesville FL 32611;

    Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611;

    Department of Chemical Engineering, Dankook University, Yongin 448-701, Korea;

    Department of Chemical Engineering, Dankook University, Yongin 448-701, Korea;

    Kopin Corp., Taunton, MA 02780;

    Kopin Corp., Taunton, MA 02780;

    Kopin Corp., Taunton, MA 02780;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号