Sub-200 nm gap electrodes by soft UV nanoimprint lithography using polydimethylsiloxane mold without external pressure

F. Hamouda; G. Barbillon; F. Gaucher; B. Bartenlian

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Sub-200 nm gap electrodes by soft UV nanoimprint lithography using polydimethylsiloxane mold without external pressure

机译：使用聚二甲基硅氧烷模具通过软紫外纳米压印光刻技术在200纳米以下的间隙电极而无需外部压力

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In this article, the authors present an alternative approach to electron beam lithography allowing the fabrication of gap electrodes with dimensions less than 200 nm. This approach consists of the soft ultraviolet nanoimprint lithography on nonstandard sample sizes, using polydimethylsiloxane (PDMS) as a flexible mold material. By simple deposit of the PDMS mold on the substrate, they succeeded in imprinting gaps in Amonil and the transfer of patterns of polymethylmethacrylate/ Amonil bilayer was achieved by etching the substrate with a suitable reactive ion etching process. The imprint pressure was ensured by only the weight of the PDMS mold.

机译：在本文中，作者提出了一种电子束光刻的替代方法，允许制造尺寸小于200 nm的间隙电极。这种方法包括使用聚二甲基硅氧烷（PDMS）作为柔性模具材料对非标准样品尺寸进行软紫外纳米压印光刻。通过将PDMS模具简单地沉积在基板上，他们成功地在Amonil中压印了间隙，并通过使用合适的反应离子刻蚀工艺刻蚀基板，实现了聚甲基丙烯酸甲酯/ Amonil双层图案的转移。仅通过PDMS模具的重量来确保压印压力。

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来源
《Journal of Vacuum Science & Technology》 |2010年第1期|p.82-85|共4页
作者
F. Hamouda; G. Barbillon; F. Gaucher; B. Bartenlian;
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作者单位

Institut d'Electronique Fondamentale (IEF), CNRS UMR 8622, Universite Paris-Sud XI, Centre d'Orsay, Batiment 220, 91405 Orsay Cedex, France;

Institut d'Electronique Fondamentale (IEF), CNRS UMR 8622, Universite Paris-Sud XI, Centre d'Orsay, Batiment 220, 91405 Orsay Cedex, France;

Institut d'Electronique Fondamentale (IEF), CNRS UMR 8622, Universite Paris-Sud XI, Centre d'Orsay, Batiment 220, 91405 Orsay Cedex, France;

Institut d'Electronique Fondamentale (IEF), CNRS UMR 8622, Universite Paris-Sud XI, Centre d'Orsay, Batiment 220, 91405 Orsay Cedex, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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专利

1. Sub-200 nm gap electrodes by soft UV nanoimprint lithography using polydimethylsiloxane mold without external pressure [J] . Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures . 2010,第1期

机译：使用聚二甲基硅氧烷模具通过软紫外纳米压印光刻技术在200纳米以下的间隙电极而无需外部压力
2. Deformation of nanostructures on polymer molds during soft UV nanoimprint lithography [J] . Sandra Gilles, MarDiez, Andreas Offenh?usser, Nanotechnology . 2010,第24期

机译：软UV纳米压印光刻过程中聚合物模具上纳米结构的变形
3. Improved mold fabrication for the definition of high quality nanopatterns by Soft UV-Nanoimprint lithography using diluted PDMS material [J] . Namil Koo, Markus Bender, Ulrich Plachetka, Microelectronic Engineering . 2007,第5a8期

机译：通过使用稀释的PDMS材料的软UV-纳米压印光刻技术改进的模具制造，以定义高质量的纳米图案
4. Fabrication of Sub-500 nm Source and Drain Electrodes for Organic Field Effect Transistor using UV Nanoimprint Lithography with Low- Cost Silicon Mold and Lift-Off Process [C] . Lichao Teng, Robert Kirchner, Matthias Plotner, GMM-Workshops Mikro-Nano-Integration . 2011

机译：用UV纳米压印光刻制备用于有机场效应晶体管的子-500nm源极和漏电极，具有低成本硅模具和剥离过程
5. Step and flash imprint lithography: A low-pressure, room-temperature nanoimprint lithography. [D] . Colburn, Matthew Earl. 2001

机译：分步和快速压印光刻：低压，室温纳米压印光刻。
6. Soft UV nanoimprint lithography-designed highly sensitive substrates for SERS detection [O] . Maximilien Cottat, Nathalie Lidgi-Guigui, Inga Tijunelyte, 2014

机译：软紫外纳米压印光刻设计的用于SERS检测的高灵敏度基材
7. Importance of Molds for Nanoimprint Lithography: Hard, Soft, and Hybrid Molds [O] . B. Kwon, Jong H. Kim 2016

机译：纳米压印光刻模具的重要性：硬，柔软和杂种模具

Sub-200 nm gap electrodes by soft UV nanoimprint lithography using polydimethylsiloxane mold without external pressure

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