Linewidth metrology for sub-10-nm lithography

S. Thoms; D. S. Macintyre

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Linewidth metrology for sub-10-nm lithography

机译：10纳米以下光刻的线宽计量

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摘要

As optical lithography advances toward the 10 nm mark, much effort is being expended to push electron beam lithography into the deep sub-10-nm regime. A significant issue at this length scale is the ability to accurately measure and compare linewidths. Measurements using secondary electron micrographs have a bias of a few nanometers and are therefore difficult to interpret in the sub-10-nm regime. Transmission electron microscopy can give greater accuracy but requires significant effort. This article shows that the use of a backscattered electron image together with a metal coating where appropriate can yield better measurement results than by using secondary electrons. With the use of a suitable model, linewidths for sub-10-nm hydrogen silsesquioxane lines were extracted with an estimated error of 1 nm.

机译：随着光学光刻技术朝着10 nm大关发展，人们花费了很多精力将电子束光刻技术推向10纳米以下深度。在这种长度范围内的一个重要问题是准确测量和比较线宽的能力。使用二次电子显微照片进行的测量具有几纳米的偏差，因此很难在低于10 nm的范围内解释。透射电子显微镜可以提供更高的准确性，但需要付出巨大的努力。本文表明，与使用二次电子相比，将背散射电子图像与适当的金属涂层一起使用可产生更好的测量结果。通过使用合适的模型，提取了低于10 nm的氢倍半硅氧烷氢线的线宽，估计误差为1 nm。

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来源
《Journal of Vacuum Science & Technology》 |2010年第6期|p.C6H6-C6H10|共5页
作者
S. Thoms; D. S. Macintyre;
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作者单位

James Watt Nanofabrication Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, Scotland G12 8LT, United Kingdom;

James Watt Nanofabrication Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, Scotland G12 8LT, United Kingdom;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
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1. Feasibility study of sub-10-nm half-pitch fabrication by chemically amplified resist processes of extreme ultraviolet lithography: I. Latent image quality predicted by probability density model [J] . Takahiro Kozawa, Julius Joseph Santillan, Toshiro Itani Japanese journal of applied physics . 2014,第10期

机译：通过极端紫外光刻的化学放大抗蚀剂工艺制造低于10纳米半节距的可行性研究：I.通过概率密度模型预测的潜像质量
2. 130kV High-Resolution Electron Beam Lithography System for Sub-10-nm Nanofabrication [J] . Teruaki Okino, Yukio Kuba, Masahiro Shibata, Japanese journal of applied physics . 2013,第6issue2期

机译：用于10纳米以下纳米制造的130kV高分辨率电子束光刻系统
3. Path to achieve sub-10-nm half-pitch using electron beam lithography [J] . A. Tavakkoli K. G., S. N. Piramanayagam, M. Ranjbar, Journal of Vacuum Science & Technology . 2011,第1期

机译：使用电子束光刻技术实现10nm以下半间距的路径
4. X-ray mask metrology: the development of linewidth standards for x-ray lithography [C] . Michael T. Postek, National Institute of Standards, Technology, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III . 1993

机译：X射线掩模计量学：X射线光刻线宽标准的发展
5. Characterization of extreme ultraviolet lithography photoresists using advanced metrology and fitting techniques. [D] . Kane, Genevieve A. 2014

机译：使用先进的计量学和拟合技术对极端紫外光刻光刻胶进行表征。
6. X-Ray Lithography Mask Metrology: Use of Transmitted Electrons in an SEM for Linewidth Measurement [O] . Michael T. Postek, Jeremiah R. Lowney, Andras E. Vladar, 1993

机译：X射线光刻掩模计量学：透射电子在SEM中用于线宽测量
7. Sub-10-nm lithography with light-ion beams [O] . Winston Donald Ph. D. Massachusetts Institute of Technology 2012

机译：采用光离子束的亚10nm光刻

Linewidth metrology for sub-10-nm lithography

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