tructural and optical properties of self-assembled InAs quantum dot molecules on GaAs substrates

Peng Tian; Lirong Huang; Yi Yu; Dexiu Huang

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tructural and optical properties of self-assembled InAs quantum dot molecules on GaAs substrates

机译：GaAs衬底上自组装InAs量子点分子的结构和光学性质

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Self-assembled laterally aligned InAs quantum dot molecules (QDMs) were grown on GaAs substrates by metal-organic chemical vapor deposition. The effects of growth temperature and InAs coverage on the structural and optical properties of QDMs are investigated by using atomic force microscopy and photoluminescence. It is found that through appropriately selecting growth parameters, QDMs composed of two closely spaced InAs quantum dots (QDs) are formed, and the distance between the two QDs can be controlled. Moreover, a redshift of emission wavelength attributed to the formation of QDMs is observed.

机译：通过金属有机化学气相沉积法在GaAs衬底上生长自组装的横向排列的InAs量子点分子（QDM）。利用原子力显微镜和光致发光研究了生长温度和InAs覆盖度对QDMs结构和光学性能的影响。发现通过适当地选择生长参数，形成了由两个紧密间隔的InAs量子点（QD）组成的QDM，并且可以控制两个QD之间的距离。此外，观察到归因于QDM形成的发射波长的红移。

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来源
《Journal of Vacuum Science & Technology》 |2010年第6期|p.1271-1273|共3页
作者
Peng Tian; Lirong Huang; Yi Yu; Dexiu Huang;
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作者单位

Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;

Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;

Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;

Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
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1. Structural and optical properties of self-assembled InAs quantum dot molecules on GaAs substrates [J] . Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures . 2010,第6期

机译：GaAs衬底上自组装InAs量子点分子的结构和光学性质
2. Structural and optical properties of stacked self-assembled InAs/lnGaAs quantum dots on graded Si_(1-x)Ge_x/Si substrate [J] . H. Tanoto, S. F. Yoon, C. Y. Ngo, Applied Physicsletters . 2008,第21期

机译：梯度Si_（1-x）Ge_x / Si衬底上堆叠的自组装InAs / InGaAs量子点的结构和光学性质
3. Improvement of the optical property and uniformity of self-assembled InAs/InGaAs quantum dots by layer-by-layer temperature and substrate rotation [J] . Park CY, Kim JM, Park KW, Physica, E. Low-dimensional systems & nanostructures . 2008,第10期

机译：通过逐层温度和衬底旋转提高自组装InAs / InGaAs量子点的光学性能和均匀性
4. Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures [C] . Saranya Reddy Shriram, Ravindra Kumar, Sanowar Alam Gazi, Nanophotonics Conference . 2020

机译：InGaAs基体厚度对自组装亚单层InAs量子点异质结构中光学性质和应变分布的影响
5. Exploring Single Hole States in InAs/GaAs Quantum Dots and Quantum Dot Molecules under 2-D Electric Fields [D] . Ma, Xiangyu. 2018

机译：在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Quantum dot size dependent influence of the substrate orientation on the electronic and optical properties of InAs/GaAs quantum dots [O] . Mlinar, V., Peeters, F. M. 2006

机译：量子点尺寸依赖于衬底取向对衬底取向的影响 Inas / Gaas量子点的电子和光学性质

tructural and optical properties of self-assembled InAs quantum dot molecules on GaAs substrates

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