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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Insights in junction photovoltage based sheet resistance measurements for advanced complementary metal-oxide semiconductor
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Insights in junction photovoltage based sheet resistance measurements for advanced complementary metal-oxide semiconductor

机译：先进的互补金属氧化物半导体基于结光电压的薄层电阻测量的见解

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摘要

Earlier work has clearly shown that only a very few tools are able to measure reliably sheet resistances on advanced complementary metal-oxide semiconductor (CMOS) structures. One of these promising techniques is the junction photovoltage based technique, which uses a modulated light emitting diode to generate, in a millimeter size area of a single junction isolated structure, excess carriers which are separated by the underlying electrical field, and subsequently outdiffuse laterally. From the lateral variation in junction photovoltage, one can extract in a noncontact way the sheet resistance (R_s) of the top layer and the junction leakage (L) of the junction. First, a simplified theoretical solution of the underlying diffusion equations will be presented. Next, a recently developed simulation framework will be discussed, combining the SCILAB environment with SYNOPSIS/medici device simulations, allowing for the detailed study of both ideal (in agreement with the theoretical solution) and less ideal advanced CMOS structures. Using this simulation framework, new insights will be proposed relating to the capability of R_sL to characterize the impact of the presence of oxide charges on the accuracy of the measurements, and the relevance of the R_sL leakage value for the actual diode (device) reverse bias characteristics in the presence of an underlying halo/well implant.
机译：早期的工作清楚地表明，只有极少数的工具能够可靠地测量高级互补金属氧化物半导体（CMOS）结构上的薄层电阻。这些有前途的技术之一是基于结光电压的技术，该技术使用调制的发光二极管在单结隔离结构的毫米大小区域中生成多余的载流子，这些载流子被下面的电场隔开，然后横向扩散。从结光电压的横向变化中，可以非接触方式提取顶层的薄层电阻（R_s）和结的结漏电（L）。首先，将给出基础扩散方程的简化理论解。接下来，将讨论最近开发的仿真框架，将SCILAB环境与SYNOPSIS / medici器件仿真相结合，从而可以对理想的（与理论解决方案一致）和不太理想的高级CMOS结构进行详细研究。使用该仿真框架，将提出有关R_sL表征氧化物电荷存在对测量精度影响的能力以及实际二极管（器件）反向偏置的R_sL泄漏值的相关性的新见解。潜在的光环/孔植入物存在时的特性。

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