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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO_2 and SiO_2-HfO_2-SiO_2-Si stacks
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Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO_2 and SiO_2-HfO_2-SiO_2-Si stacks

机译：低能电子激发的纳米发光光谱研究HfO_2和SiO_2-HfO_2-SiO_2-Si叠层中的固有缺陷

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摘要

Low energy electron-excited nanoscale (LEEN) luminescence spectroscopy and secondary ion mass spectrometry have been used to probe the defect states and chemical composition in as-deposited relatively thick (～100 nm) HfO_2 films and in SiO_2/HfO_2/SiO_2/Si (5 nm/15 nm/5 nm) heterojunction stacks grown by plasma enhanced chemical vapor deposition including as well changes in bonding and defects after high temperature (900 ℃) annealing. LEEN measurements of optical transitions in the thicker HfO_2 films are assigned to defect-associated radiative transitions centered at approximately 2.7, 3.4, 4.2 and 5.5 eV. These spectra exhibited significant changes in as-deposited films (300 ℃) and after a 900 ℃ anneal in forming gas (N_2/H_2). Qualitative differences in LEEN spectra of stacked films are correlated with (ⅰ) formation of Hf silicate during deposition of the HfO_2 film onto the SiO_2 substrates in the as-deposited films, and (ⅱ) a chemical phase separation of these Hf silicates into a heterogeneous mixture SiO_2 and HfO_2 nanocrystallites after the 900 ℃ anneal.
机译：低能量电子激发纳米级（LEEN）发光光谱和二次离子质谱法已被用来探测沉积的相对厚（〜100 nm）HfO_2膜和SiO_2 / HfO_2 / SiO_2 / Si（通过等离子体生长的5 nm / 15 nm / 5 nm）异质结堆叠增强了化学气相沉积，包括高温（900℃）退火后键合和缺陷的变化。在较厚的HfO_2薄膜中进行光学跃迁的LEEN测量值分配给与缺陷相关的辐射跃迁，其中心约为2.7、3.4、4.2和5.5 eV。这些光谱在沉积的薄膜（300℃）和900℃的退火气体（N_2 / H_2）中显示出显着变化。堆叠膜的LEEN光谱的质量差异与（ⅰ）将HfO_2膜沉积到沉积膜中的SiO_2衬底上时形成Hf硅酸盐，以及（ⅱ）这些Hf硅酸盐化学相分离成非均相900℃退火后，SiO_2和HfO_2纳米晶的混合物。

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