...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Toward extending the capabilities of scanning spreading resistance microscopy for fin field-effect-transistor-based structures
【24h】

Toward extending the capabilities of scanning spreading resistance microscopy for fin field-effect-transistor-based structures

机译：致力于扩展基于鳍场效应晶体管的结构的扫描扩展电阻显微镜的功能

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this work, the authors investigate the present capabilities of scanning spreading resistance microscopy (SSRM) to map the carrier distribution in fin field-effect-transistor- (FinFET) based structures. Whereas for a planar metal-oxide-semiconductor transistor the distance to the back-contact is noncritical, this no longer holds true for a FinFET-based device as the limited cross-section of the fin may induce an important series resistance. The authors examine theoretically and experimentally the influence of the back-contact distance and the fin dimensions on the dominance of the spreading resistance. Based on the study, the authors propose a maximum distance for the back-contact that is needed to obtain a reliable two-dimensional map of the spreading resistance of fins with uniform doping concentration and fins with junction using SSRM. As the back-contacts are FIB deposited, the authors also study the influence of the Ga~+ beam energy on the back-contact resistance, which adds critically to the bulk resistance of the fin, giving rise to a higher total resistance. Finally, the authors compare the fin dimensions obtained with SSRM and transmission electron microscopy micrograph.
机译：在这项工作中，作者研究了扫描扩展电阻显微镜（SSRM）在基于鳍式场效应晶体管（FinFET）的结构中映射载流子分布的当前功能。尽管对于平面金属氧化物半导体晶体管而言，到背接触的距离并不重要，但对于基于FinFET的器件，这不再成立，因为鳍的有限横截面可能会引起重要的串联电阻。作者在理论上和实验上研究了背接触距离和鳍尺寸对扩展电阻优势的影响。基于这项研究，作者建议使用背面接触的最大距离，以获得具有均匀掺杂浓度的鳍片和带有SSRM结的鳍片的扩散电阻的可靠二维图。由于背接触是FIB沉积，因此作者还研究了Ga〜+束能量对背接触电阻的影响，这严重增加了鳍的体电阻，从而导致更高的总电阻。最后，作者比较了用SSRM和透射电子显微镜显微照片获得的鳍片尺寸。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号