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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Nanofabrication Of Super-high-aspect-ratio Structures In Hydrogen Silsesquioxane From Direct-write E-beam Lithography And Hot Development
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Nanofabrication Of Super-high-aspect-ratio Structures In Hydrogen Silsesquioxane From Direct-write E-beam Lithography And Hot Development

机译：直写电子束光刻技术在氢倍半硅氧烷超高纵横比结构的纳米加工中的应用

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摘要

Super-high-aspect-ratio structures (＞ 10) in hydrogen silsesquioxane resist using direct write electron beam lithography at 100 kV and hot development and rinse are reported. Posts of 100 nm in width and 1.2 μm tall have been successfully fabricated without the need of supercritical drying. Hot rinse solution with isopropyl alcohol has been used to reduce surface tension effects during drying. Dose absorption effects have been observed and modeled using known Monte Carlo models. These results indicate that for e-beam exposures of thick negative resists (＞ 1 μm), the bottom of the structures will have less cross-link density and therefore will be less stiff than the top. These results will have impact in the design of high-aspect-ratio structures that can be used in microelectromechanical system devices and high-aspect-ratio Fresnel zone plates.
机译：据报道，采用直接写电子束光刻技术在100 kV下对倍半硅氧烷氢抗蚀剂具有超高纵横比结构（＞ 10），并且进行了热显影和冲洗。已经成功地制造了宽度为100 nm，高度为1.2μm的桩，而无需超临界干燥。使用异丙醇的热漂洗溶液可减少干燥过程中的表面张力影响。已经使用已知的蒙特卡洛模型观察和建模了剂量吸收效应。这些结果表明，对于厚负性抗蚀剂（> 1μm）的电子束曝光，结构的底部将具有较小的交联密度，因此比顶部的刚性小。这些结果将对可用于微机电系统设备和高纵横比菲涅耳波带片的高纵横比结构的设计产生影响。

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