...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Photopolymerization kinetic study of UV nanoimprint lithography dedicated resists
【24h】

Photopolymerization kinetic study of UV nanoimprint lithography dedicated resists

机译：紫外纳米压印光刻专用光刻胶的光聚合动力学研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This article reports on the properties of ultraviolet nanoimprint lithography dedicated imprinting materials. Studied solutions are composed of a diacrylate-based monomer and a variable amount (1%, 2%, and 4% in weight) of three different photoinitiators from Ciba Specialty Chemicals (Irgacure 819, Irgacure OXE02, and Irgacure 379). Photopolymerization kinetic studies were conducted on these solutions. Quantity and type of photoinitiator could be optimized in order to obtain a polymerization rate higher than 95% with an exposure dose as low as 20 mJ/cm~2. The etch resistance of this home-developed imprinting resist was characterized under standard plasma etching conditions. We observed that the polymerization rate has a large influence on the plasma etch resistance, and we show that the etch rates of our best material is comparable to the one measured for 193 nm photolithography resists and makes it a very good candidate as a masking layer for direct pattern transfer.
机译：本文报道了紫外线纳米压印光刻专用压印材料的性能。研究的溶液由基于二丙烯酸酯的单体和可变数量（按重量计分别为1％，2％和4％）的Ciba Specialty Chemicals的三种不同的光引发剂（Irgacure 819，Irgacure OXE02和Irgacure 379）组成。在这些溶液上进行了光聚合动力学研究。可以优化光引发剂的数量和类型，以在曝光剂量低至20 mJ / cm〜2的条件下获得高于95％的聚合率。在标准等离子刻蚀条件下表征了这种自行开发的压印抗蚀剂的耐蚀性。我们观察到聚合速率对等离子体的抗蚀刻性有很大的影响，并且我们发现我们最好的材料的蚀刻速率与193 nm光刻胶的蚀刻速率相当，这使其成为用于掩膜的很好的候选材料直接模式转移。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号