Plycrystalline diamond film MiS diode and field effect transistor

Koichi Miyata; Kozo Nishimura; Hisashi Koyamn

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Plycrystalline diamond film MiS diode and field effect transistor

机译：多晶金刚石薄膜MiS二极管和场效应晶体管

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This article describes fabrication and characterization of two basic devices, diodes and field effect transistors, using B-doped semiconducting polycrystalline diamond films. The diode consists of a trilayer of aluminum electrode, undoped diamond, and semiconducting B- doped p-type diamond, fabricated on a low-resistivity Si substrate. The transistor has a linear configuration of source, gate, and drain, where the gate region has a MiS structure. The fabricated diodes showed a high Rectification ratio up to 300 deg. C, while the transistors Exhibited a drain current modulation and cut-off up to 200 deg.C.

机译：本文介绍了使用B掺杂半导体多晶金刚石薄膜制造和表征两个基本器件（二极管和场效应晶体管）的过程。二极管由三层铝电极，未掺杂的金刚石和半导电的B掺杂的p型金刚石组成，并在低电阻率Si衬底上制造。该晶体管具有源极，栅极和漏极的线性配置，其中栅极区域具有MiS结构。制成的二极管显示出高达300度的高整流比。 C，而晶体管表现出漏极电流调制和截止至200℃。

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来源
《Kobelco Technology Review》 |1997年第19期|p.5-7|共3页
作者
Koichi Miyata; Kozo Nishimura; Hisashi Koyamn;
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正文语种 eng
中图分类冶金工业;
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Plycrystalline diamond film MiS diode and field effect transistor

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