Epitaxial growth of Bi ultra-thin films on GaAs by electrodeposition

M. Plaza; M. Abuin; A. Mascaraque; M.A. Gonzalez-Barrio; L Perez

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Epitaxial growth of Bi ultra-thin films on GaAs by electrodeposition

机译：电沉积在GaAs上外延生长Bi超薄膜

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We report on the growth of thin bismuth films on GaAs substrates with different orientations by means of electrochemical deposition. Atomic force microscopy reveals that the films are continuous and exhibit low roughness when they are grown under the appropriate overpotential. co-IB X-ray diffraction scans only show reflections that can be indexed as (01L), meaning that Bi grows onto GaAs only in combinations of the (001) and (010) orientations. The matching between the GaAs substrate and the Bi layer has been studied by asymmetric X-ray scans, finding that Bi grows epitaxially on GaAs(110) and GaAs(111)B, both As-terminated surfaces. We explain these results by structural and chemical considerations.

机译：我们报告了通过电化学沉积在不同取向的GaAs衬底上铋薄膜的生长。原子力显微镜显示，薄膜在适当的超电势下生长时是连续的，并且粗糙度低。 co-IB X射线衍射扫描仅显示可索引为（01L）的反射，这意味着Bi仅在（001）和（010）方向的组合下才能生长到GaAs上。已通过非对称X射线扫描研究了GaAs衬底与Bi层之间的匹配，发现Bi都在两个As终止的表面GaAs（110）和GaAs（111）B上外延生长。我们通过结构和化学方面的考虑来解释这些结果。

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来源
《Materials Chemistry and Physics》 |2012年第1期|523-530|共8页
作者
M. Plaza; M. Abuin; A. Mascaraque; M.A. Gonzalez-Barrio; L Perez;
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作者单位

Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid, Spain,School of Applied & Engineering Physics, Cornell University Ithaca, NY, USA;

Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid, Spain,Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040, Spain;

Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid, Spain,Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040, Spain;

Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid, Spain,Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040, Spain;

Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid, Spain,Institute de Sistemas Optoelectronicos y Microtecnologia, Universidad Politecnica de Madrid, 28040 Madrid, Spain;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
atomic force microscopy (AFM); thin films; epitaxial growth; electrochemical tecniques;

机译：原子力显微镜（AFM）;薄膜;外延生长电化学技术;

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2. Epitaxial growth and characterization of Bi_(1-x)Sb_xspin Hall thin films on GaAs(111 )A substrates [J] . Yugo Ueda, Nguyen Huynh Duy Khang, Kenichiro Yao, Applied Physics Letters . 2017,第6期

机译：GaAs（111）A衬底上Bi_（1-x）Sb_xspin霍尔薄膜的外延生长和表征
3. Magnetic anisotropy of half-metallic Co2FeAl ultra-thin films epitaxially grown on GaAs(001) [J] . Bolin Lai, Xiaoqian Zhang, Xianyang Lu, AIP Advances . 2019,第6期

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机译：从硒硫酸盐水溶液中的（LLL）INP和（100）GaAs的外延ZnSe薄膜电沉积
5. Growth and structure of ultra-thin epitaxial chromium and iron oxide films on silver(001) and silver(111): A comprehensive study accomplished by x-ray photoelectron diffraction and low energy electron diffraction. [D] . Ozturk, Osman. 2002

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6. Twin domain imaging in topological insulator Bi2Te3 and Bi2Se3 epitaxial thin films by scanning X-ray nanobeam microscopy and electron backscatter diffraction [O] . Dominik Kriegner, Petr Harcuba, Jozef Veselý, -1

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机译：在GaAs（001）上外延生长的半金属Co2薄膜的磁各向异性超薄薄膜
8. Low Temperature Epitaxial Growth of CoGe(001)/GaAs(100) Films Using the PartiallyIonized Beam Deposition Technique [R] . Mello, K. E., Soss, S. R., Murarka, S. P., 1996

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Epitaxial growth of Bi ultra-thin films on GaAs by electrodeposition

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