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Boron doping of silicon rich carbides: Electrical properties

机译：富硅碳化物的硼掺杂：电性能

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摘要

Boron doped multilayers based on silicon carbide/silicon rich carbide, aimed at the formation of silicon nanodots for photovoltaic applications, are studied. X-ray diffraction confirms the formation of crystallized Si and 3C-SiC nanodomains. Fourier Transform Infrared spectroscopy indicates the occurrence of remarkable interdiffusion between adjacent layers. However, the investigated material retains memory of the initial dopant distribution. Electrical measurements suggest the presence of an unintentional dopant impurity in the intrinsic SiC matrix. The overall volume concentration of nanodots is determined by optical simulation and is shown not to contribute to lateral conduction. Remarkable higher room temperature dark conductivity is obtained in the multilayer that includes a boron doped well, rather than boron doped barrier, indicating efficient doping in the former case. Room temperature lateral dark conductivity up to 10~(-3) S/cm is measured on the multilayer with boron doped barrier and well. The result compares favorably with silicon dioxide and makes SiC encouraging for application in photovoltaic devices.
机译：研究了基于碳化硅/富硅碳化物的硼掺杂多层，旨在形成用于光伏应用的硅纳米点。 X射线衍射证实结晶的Si和3C-SiC纳米域的形成。傅立叶变换红外光谱表明相邻层之间存在明显的相互扩散。然而，所研究的材料保留了初始掺杂剂分布的记忆。电学测量表明，本征SiC基质中存在意外掺杂杂质。纳米点的总体积浓度是通过光学模拟确定的，并且显示不有助于横向传导。在包括硼掺杂的阱而不是硼掺杂的势垒的多层中获得了显着更高的室温暗电导率，这表明在前一种情况下有效的掺杂。在带有硼掺杂势垒和阱的多层板上测得的室温横向暗电导率高达10〜（-3）S / cm。其结果可与二氧化硅相媲美，使SiC在光伏器件中的应用令人鼓舞。

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  • 来源
    《Materials Science and Engineering》 |2013年第9期|551-558|共8页
  • 作者

    C. Summonte; M.Canino; M. Allegrezza; M.Bellettato; A. Desalvo; R.Shukla; I.P.Jain; I. Crupi; S. Milita; L. Ortolani; L. Lopez-Conesa; S. Estrade; F. Peiro; B. Garrido;

  • 作者单位

    Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e i Microsistemi, Bologna, Italy;

    Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e i Microsistemi, Bologna, Italy;

    Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e i Microsistemi, Bologna, Italy;

    Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e i Microsistemi, Bologna, Italy;

    Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e i Microsistemi, Bologna, Italy;

    Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e i Microsistemi, Bologna, Italy ,Centre of Non-Conventional Energy Resources, University of Rajasthan, Jaipur, India;

    Centre of Non-Conventional Energy Resources, University of Rajasthan, Jaipur, India;

    Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e i Microsistemi, Catania, Italy;

    Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e i Microsistemi, Bologna, Italy;

    Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e i Microsistemi, Bologna, Italy;

    MIND - UB, Electronics Department, University of Barcelona, Barcelona, Spain;

    MIND - UB, Electronics Department, University of Barcelona, Barcelona, Spain;

    MIND - UB, Electronics Department, University of Barcelona, Barcelona, Spain;

    MIND - UB, Electronics Department, University of Barcelona, Barcelona, Spain;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Silicon rich carbide; Silicon nanodots; Boron doping; Optical properties; UV-vis reflection and transmittance; Electrical transport;

    机译：富硅碳化物;硅纳米点;硼掺杂;光学性质;紫外线可见反射和透射率;电力运输;

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