Silicon heterojunction solar cells: Optimization of emitter and contact properties from analytical calculation and numerical simulation

R.Varache; J.P. Kleider; M.E.Gueunier-Farret; L. Korte

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Silicon heterojunction solar cells: Optimization of emitter and contact properties from analytical calculation and numerical simulation

机译：硅异质结太阳能电池：通过分析计算和数值模拟优化发射极和接触特性

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The key constituent of silicon heterojunction solar cells, the amorphous silicon/crystalline silicon hetero-junction (a-Si:H/c-Si), offers a high open-circuit voltage (V_(oc)) potential providing that both the interface defect passivation and the band bending in the c-Si absorber are sufficient. We detail here analytical calculations of the equilibrium band bending in c-Si (φ_(c-Si)) in Transparent Conductive Oxide (TCO)/a-Si:H emitter/c-Si absorber structures. We studied the variation of some electronic parameters (density of states, work function) according to relevant experimental values. This study introduces a discussion on the optimization of the doped emitter layer in relation with the work function of the TCO. In particular, we argue on the advantage of having a highly defective (p)a-Si:H emitter layer that maximizes φ_(c-Si) and reduces the influence of the TCO on V_(oc).

机译：硅异质结太阳能电池的关键组成部分，非晶硅/晶体硅异质结（a-Si：H / c-Si）提供了高的开路电压（V_（oc））电位，从而提供了两个界面缺陷c-Si吸收剂中的钝化和能带弯曲就足够了。我们在这里详细介绍了透明导电氧化物（TCO）/ a-Si：H发射极/ c-Si吸收体结构中c-Si（φ_（c-Si））中平衡带弯曲的分析计算。我们根据相关的实验值研究了一些电子参数（状态密度，功函数）的变化。本研究介绍了与TCO的功函数相关的掺杂发射极层优化的讨论。特别是，我们争辩说具有高度缺陷的（p）a-Si：H发射极层的优点，该发射极层可最大化φ_（c-Si）并减少TCO对V_（oc）的影响。

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《Materials Science and Engineering》 |2013年第9期|593-598|共6页
作者
R.Varache; J.P. Kleider; M.E.Gueunier-Farret; L. Korte;
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作者单位

Laboratoire de Genie Electrique de Paris, Centre National de la Recherche Scientifique - Unite Mixte de Recherche 8507, Ecole Supelec, University Paris-Sud 11, Universite Pierre et Marie Curie - Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex, France ,Helmholtz-Zentrum Berlin fuer Materialien und Energie, Institut Silizium Photovoltaik, Kekulestrasse 5, D-12489 Berlin, Germany;

Laboratoire de Genie Electrique de Paris, Centre National de la Recherche Scientifique - Unite Mixte de Recherche 8507, Ecole Supelec, University Paris-Sud 11, Universite Pierre et Marie Curie - Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex, France;

Laboratoire de Genie Electrique de Paris, Centre National de la Recherche Scientifique - Unite Mixte de Recherche 8507, Ecole Supelec, University Paris-Sud 11, Universite Pierre et Marie Curie - Paris 6, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex, France;

Helmholtz-Zentrum Berlin fuer Materialien und Energie, Institut Silizium Photovoltaik, Kekulestrasse 5, D-12489 Berlin, Germany;

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正文语种 eng
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关键词
Amorphous silicon; Heterojunction; Emitter; Defects; Solar cells;

机译：非晶硅异质结;发射极;缺陷;太阳能电池;

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Silicon heterojunction solar cells: Optimization of emitter and contact properties from analytical calculation and numerical simulation

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