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首页> 外文期刊>Materials Science and Engineering >Transmission electron microscopy study of Ag-Si composites grown on Si (111) substrates
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Transmission electron microscopy study of Ag-Si composites grown on Si (111) substrates

机译：Si（111）衬底上生长的Ag / n-Si复合材料的透射电子显微镜研究

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摘要

A transmission electron microscopy (TEM) study was made of 3 μm thick Ag-Si composite films deposited on Si (111) substrates at temperatures of 400 and 550℃. Containing averages of 22 at.% Ag and 77.9 at.% Si they were prepared by magnetron co-sputtering of Ag and heavily doped n-type Si targets. Films deposited at 400℃ had a large number of Ag particles 5 nm in size embedded in amorphous silicon, while those prepared at 550℃ had many 10 nm sized Ag particles that were embedded in crystalline silicon. Unlike previous studies involving these materials, the Ag particles were uniformly distributed throughout the silicon, with no segregation occurring in the surface areas. This is due to the heavy doping of the silicon matrix and is reported here for the first time.
机译：透射电子显微镜（TEM）研究是在400和550℃的温度下，将3μm厚的Ag / n-Si复合膜沉积在Si（111）衬底上。它们通过平均磁控溅射Ag和重掺杂n型Si靶材制备，平均含有22 at。％的Ag和77.9 at。的Si。在400℃下沉积的薄膜中有大量5 nm大小的Ag颗粒嵌入非晶硅中，而在550℃下制备的薄膜中有许多10 nm尺寸的Ag颗粒嵌入晶体硅中。与先前涉及这些材料的研究不同，Ag颗粒均匀地分布在整个硅中，在表面区域没有偏析。这是由于硅基体的重掺杂所致，这是首次报道。

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