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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Si nanocrystal-containing SiO_x (x < 2) produced by thermal annealing of PECVD realized thin films
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Si nanocrystal-containing SiO_x (x < 2) produced by thermal annealing of PECVD realized thin films

机译：通过PECVD热退火制得的薄膜所含的Si纳米晶SiO_x（x <2）

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摘要

This paper is focused on the description of relationship between deposition parameters (flow rates of SiH_4 and N_2O precursor gases) and properties of SiO_x films. The silicon-rich silicon oxide thin films deposited using plasma enhanced chemical vapour deposition (PECVD) in silane-nitrous oxide-helium discharges were thermally annealed at 1273 K for 1 h. Fourier transform infrared (FTIR) spectroscopy indicated that the chemical composition was dominated by silicon suboxide containing silicon-nitride and silicon-hydrogen bonds. For the as-deposited films and for the annealed films, Raman spectra show a band approximately at 480 cm~(-1), related to amorphous silicon and a band at 520 cm~(-1), related to nanocrystallite silicon, respectively. Transmission electron microscopy analysis demonstrated that silicon nanocrystals (Si nc), having a mean radius ranging between 3 and 6 nm were present in the annealed films. Using spectroscopic ellipsometry (SE) in the 0.2-0.88 μm spectral range, the values of layer thickness, optical indices and component volume fractions were determined using the Fourouhi-Bloomer (FB) model for the as-deposited films and the Bruggeman effective medium approximation (BEMA) for the annealed ones.
机译：本文着重于描述沉积参数（SiH_4和N_2O前驱体气体的流速）与SiO_x膜的性能之间的关系。使用等离子增强化学气相沉积（PECVD）在硅烷-一氧化二氮-氦气放电中沉积的富硅氧化硅薄膜在1273 K下热退火1 h。傅立叶变换红外光谱（FTIR）表明，化学成分主要由含有氮化硅和硅氢键的低氧化硅所主导。对于沉积后的薄膜和退火后的薄膜，拉曼光谱分别显示出与非晶硅有关的大约480 cm〜（-1）的谱带和与纳米微晶硅有关的520 cm〜（-1）的谱带。透射电子显微镜分析表明，退火膜中存在平均半径为3至6 nm的硅纳米晶体（Si nc）。使用光谱椭圆偏振法（SE）在0.2-0.88μm的光谱范围内，使用Fourouhi-Bloomer（FB）模型确定沉积薄膜的层厚度，光学指数和组分体积分数，并采用Bruggeman有效介质近似（BEMA）。

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