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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Effect of nitrogen in the electronic structure of GaAsN and GaInAs(N) compounds grown by molecular beam epitaxy
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Effect of nitrogen in the electronic structure of GaAsN and GaInAs(N) compounds grown by molecular beam epitaxy

机译：氮对分子束外延生长GaAsN和GaInAs（N）化合物电子结构的影响

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We have performed spectroscopic measurements in order to investigate the exciton localization mechanism and the bandgap energies of GaAsN in three regimes: (ⅰ) doped; (ⅱ) intermediate doped-alloy; and (ⅲ) alloy and the transition energies in strained GaInAsN/GaAs quantum wells laser structures. Low temperature photoluminescence spectrum of GaAsN layer in doped regime shows several features of excitons bound to nitrogen complexes. In the intermediate doped-alloy regime, these bound states are tightly coupled to form a wide band below the GaAsN bandgap energy. We have used the band anticrossing model to simulate the evolution of the GaAsN bandgap energies versus nitrogen composition. We have found that incorporation of 1% nitrogen shifts the bandgap energy of about 225 meV. The interband transitions in GaInAsN/GaAs quantum wells (QWs) structures are investigated using photovoltage measurements and can be identified using the envelope function formalism taking into account the effects of strain and the bandgap lowering due to the presence of nitrogen.
机译：为了研究激子的定位机理和GaAsN在三种状态下的带隙能，我们进行了光谱测量。 （ⅱ）中间掺杂合金； （ⅲ）合金和应变GaInAsN / GaAs量子阱激光器结构中的跃迁能。掺杂态GaAsN层的低温光致发光光谱显示出与氮配合物结合的激子的几个特征。在中间掺杂合金体系中，这些键合态紧密耦合，形成低于GaAsN带隙能的宽带。我们已经使用能带反交叉模型来模拟GaAsN带隙能量对氮组成的演化。我们已经发现，掺入1％的氮会改变约225 meV的带隙能量。使用光电压测量研究了GaInAsN / GaAs量子阱（QWs）结构中的带间跃迁，并且可以考虑到应变的影响以及由于氮的存在而引起的带隙降低，使用包络函数形式来确定。

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