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首页> 外文期刊>Materials science & engineering >Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates
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Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates

机译：MBE在（311）A和（111）A GaAs衬底上通过MBE生长的AlGaAs / InGaAs / GaAs P-HEMTs结构中2DEG密度的增强

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The pseudomorphic high electron mobility transistor (P-HEMT) structure materials Al_(0.33)Ga_(0.7)As/Ir_(0.1)Ga_(0.9)As/GaAs have been grown by molecular beam epitaxy (MBE) on (311)A and (111)A GaAs substrates. The epitaxy of strain heterostructure on high index GaAs substrate has led to new growth phenomena, material properties and device applications. The photoluminescence (PL) spectra of the structures have been measured at low temperature. The dominant emission in the PL spectra is due to the recombination from the first electron (el) subband to the first heavy-hole (hh1) subband (E_(11): el-hh1). This feature (E_(11)) is a relatively broad peak and has a typical asymmetric line shape. The transformation of the PL spectra in the close vicinity of the Fermi edge (E_F) under different excitation densities gives strong evidence for the Fermi Edge Singularity (FES) existence. The density of the quasi-two-dimensional electron gas (2DEG) determined by PL study (n_s~(PL)), is in sufficient agreement with the values found from Hall measurements n_s~(Hall) at 77 K. The results prove an increase of the electron density in sample grown on GaAs (111)A and (311 )A rather than in equivalent sample grown on (001) GaAs substrate. This effect is in good agreement with our theoretical prediction, which is based on a self-consistent solution of the coupled Schroedinger and Poisson equations.
机译：通过分子束外延（MBE）在（311）A和（111）GaAs衬底。高折射率GaAs衬底上应变异质结构的外延导致了新的生长现象，材料性能和器件应用。已经在低温下测量了结构的光致发光（PL）光谱。 PL光谱中的主要发射是由于从第一电子（el）子带到第一重空穴（hh1）子带的重组（E_（11）：el-hh1）。此特征（E_（11））是一个相对较宽的峰，并具有典型的不对称线形。在不同激发密度下，费米边缘（E_F）附近PL光谱的转换为费米边缘奇异性（FES）的存在提供了有力的证据。通过PL研究（n_s〜（PL））确定的准二维电子气（2DEG）的密度与在77 K下霍尔测量值n_s〜（Hall）得出的值充分吻合。结果证明，在（111）A和（311）A的GaAs上生长的样品，而不是在（001）的GaAs衬底上生长的等效样品中，电子密度增加。这种效果与我们的理论预测非常吻合，后者基于耦合的Schroedinger和Poisson方程的自洽解。

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