Secondary ion mass spectrometry of dopant and impurity elements in wide bandgap semiconductors

R.G.Wilson; J.M.Zavada

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Secondary ion mass spectrometry of dopant and impurity elements in wide bandgap semiconductors

机译：宽带隙半导体中掺杂剂和杂质元素的二次离子质谱

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摘要

Based on secondary ion mass spectrometry (SIMS) measurements, we have compiled state-of-the-art data concerning dopant elements and natural impurities in the wide bandgap semiconductor materials diamond, SiC, ZnSe, GaN and AIN. Samples were prepared by ion implantation of different elements into these materials and post-implantation thermal annealing. SIMS depth profiling techniques were used to determine atomic depth profiles of implanted elements and subsequent changes produced by annealing. Range statistics and SIMS relative sensitivity factors were established for major dopant and impurity elements in these wide bandgap materials. Results of these studies are presented in tabular form along with representative depth profile figures.

机译：基于二次离子质谱（SIMS）测量，我们收集了有关宽带隙半导体材料金刚石，SiC，ZnSe，GaN和AIN中掺杂元素和自然杂质的最新数据。通过将不同元素离子注入这些材料并进行注入后热退火来制备样品。 SIMS深度剖析技术用于确定注入元素的原子深度分布以及随后退火产生的变化。针对这些宽带隙材料中的主要掺杂剂和杂质元素，建立了范围统计数据和SIMS相对灵敏度因子。这些研究的结果以表格形式与代表性的深度剖面图一起呈现。

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来源
《Materials Science & Engineering》 |2012年第12期|101-128|共28页
作者
R.G.Wilson; J.M.Zavada;
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作者单位

Stevenson Ranch, CA 91381, United States;

Department of Electrical & Computer Engineering, Polytechnic Institute of New York University, Brooklyn, NY 11201, United States;

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原文格式 PDF
正文语种 eng
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关键词
SIMS; wide bandgap semiconductors; ion implantation; impurity analysis; atomic depth profiling;

机译：模拟人生;宽带隙半导体;离子注入杂质分析原子深度剖析;

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2. Reproducibility aspects of relative sensitivity factors for major and impurity elements in brass using secondary ion mass spectrometry [J] . A. Adriaens, F. Adams International Journal of Mass Spectrometry and Ion Processes . 1997,第1a2期

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3. Secondary Ion Mass Spectrometry and Time-of-Flight Secondary Ion Mass Spectrometry Study of Impurity Measurements in HgCdTe [J] . STEVE PRICE, LARRY WANG, ALICE WANG Journal of Electronic Materials . 2007,第8期

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4. Non-routine Dopant, Impurity and Stoichiometry Characterization of SiGe, SiON and Ultra-low Energy B-implanted Si Using Secondary Ion Mass Spectrometry [C] . Charles W. Magee, Temel H. Buyuklimanli, John W. Marino, Symposium on Silicon Front-End Junction Formation Technologies, Apr 2-4, 2002, San Francisco, California . 2002

机译：二次离子质谱法对SiGe，SiON和超低能B注入的Si的非常规掺杂剂，杂质和化学计量学表征
5. Growth, characterization and luminescence and optical properties of rare -earth elements and transition metals doped in wide bandgap nitride semiconductors [D] . Maqbool, Muhammad 2005

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8. Distribution Analysis of Major and Trace Elements Through Semiconductor Layers of Changing Matrix Using SIMS (Secondary Ion Mass Spectrometry) [R] . Galuska, A. A., Morrison, G. H. 1986

机译：利用sIms（二次离子质谱）分析变换矩阵半导体层中主要元素和微量元素的分布

Secondary ion mass spectrometry of dopant and impurity elements in wide bandgap semiconductors

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