Threshold voltage shifting for memory and tuning in printed transistor circuits

著录项

• 来源
  《Materials Science & Engineering》 |2011年第4期|p.49-80|共32页
• 作者

  Bal Mukund Dhar; Recep OEzgün; Tom Dawidczyk; Andreas Andreou; Howard E. Katz;

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• 作者单位

  Department of Materials Science and Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218, USA;

  Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218, USA;

  Department of Materials Science and Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218, USA;

  Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218, USA;

  Department of Materials Science and Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218, USA;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  organic transistors; memory; threshold voltage; printed electronics; circuit tuning; charged dielectrics;

  机译：有机晶体管;内存;阈值电压;印刷电子;电路调谐;带电电介质;