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首页> 外文期刊>Journal of Microelectromechanical Systems >Temperature Compensation of Thermally Actuated, In-Plane Resonant Gas Sensor Using Embedded Oxide-Filled Trenches
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Temperature Compensation of Thermally Actuated, In-Plane Resonant Gas Sensor Using Embedded Oxide-Filled Trenches

机译：使用嵌入的氧化氧化物沟槽的热致动的热致动的内面谐振气体传感器的温度补偿

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摘要

We report the implementation of a passive temperature compensation technique in thermally actuated, silicon-based, resonant cantilever gas sensors vibrating in their fundamental in-plane resonant mode. The temperature compensation technique utilizes oxide-filled trenches along the edges of the cantilever structure and adds a single additional mask to the overall fabrication process. The trench width for effective temperature compensation was optimized using finite element simulation. The fabricated resonators exhibit a temperature coefficient of frequency (TCF) as low as 1.7 ppm/degrees C, which represents a 15x improvement compared to the same resonators without oxide trenches. Quality factors of devices with oxide compensation are similar to those measured in non-compensated counterparts. The temperature compensation technique addresses a key limitation of silicon-based, mass-sensitive chemical microsensors, namely their temperature instability due to inherent temperature-dependent material properties. Compared to our previous work, the improved frequency and baseline stability yields an almost order-of-magnitude improvement in the extrapolated limit of detection, approaching 100 ppb for toluene. [2020-0154]
机译：我们报告了在其基础面内共振模式中振动的热驱动，硅基谐振悬臂气体传感器中的被动温度补偿技术的实现。温度补偿技术利用沿悬臂结构边缘的氧化物填充沟槽，并在整个制造过程中加入单个附加掩模。使用有限元模拟优化了有效温度补偿的沟槽宽度。制造的谐振器表现出低至1.7ppm /℃的温度频率系数（TCF），与没有氧化物沟槽的相同谐振器相比，表示15倍改善。具有氧化物补偿的器件的质量因素类似于在非补偿对应物中测量的装置。温度补偿技术解决了基于硅的质量敏感的化学微传感器的关键限制，即由于固有的温度依赖性材料特性而导致的温度不稳定性。与我们以前的工作相比，改善的频率和基线稳定性在外推检测极限下产生了几乎左右的阶数，接近100ppb甲苯。 [2020-0154]

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