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首页> 外文期刊>Journal of Microelectromechanical Systems >Residual Stress Measurement on a MEMS Structure With High-Spatial Resolution
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Residual Stress Measurement on a MEMS Structure With High-Spatial Resolution

机译：高空间分辨率的MEMS结构上的残余应力测量

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A new approach to the local measurement of residual stress in microstructures is described in this paper. The presented technique takes advantage of the combined milling-imaging features of a focused ion beam (FIB) equipment to scale down the widely known hole drilling method. This method consists of drilling a small hole in a solid with inherent residual stresses and measuring the strains/displacements caused by the local stress release, that takes place around the hole. In the presented case, the displacements caused by the milling are determined by applying digital image correlation (DIC) techniques to high resolution micrographs taken before and after the milling process. The residual stress value is then obtained by fitting the measured displacements to the analytical solution of the displacement fields. The feasibility of this approach has been demonstrated on a micromachined silicon nitride membrane showing that this method has high potential for applications in the field of mechanical characterization of micro/nanoelectromechanical systems.1634
机译：本文介绍了一种新的局部测量残余应力的新方法。提出的技术利用聚焦离子束（FIB）设备的组合铣削成像功能来缩小众所周知的钻孔方法。该方法包括在具有固有残余应力的固体中钻一个小孔，并测量孔周围发生的局部应力释放引起的应变/位移。在目前的情况下，铣削引起的位移是通过将数字图像相关性（DIC）技术应用于铣削过程之前和之后拍摄的高分辨率显微照片来确定的。然后通过将测得的位移拟合到位移场的解析解中来获得残余应力值。这种方法的可行性已在微机械氮化硅膜上得到了证明，表明该方法在微/纳米机电系统的机械表征领域具有很高的应用潜力。1634

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