...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Microelectronic Engineering >Nonlinear resistive switching features of rapid-thermal-annealed aluminum nitride dielectrics with modified charge trapping behaviors
【24h】

Nonlinear resistive switching features of rapid-thermal-annealed aluminum nitride dielectrics with modified charge trapping behaviors

机译：具有改进的电荷俘获特性的快速热退火氮化铝电介质的非线性电阻切换特性

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Nonlinear resistive switching (RS) features of aluminum nitride (AlNx)-based resistance random access memories (RRAMs) with rapid thermal annealing (RTA) have been investigated. The operation voltages of AlN-based RRAMs are improved by RTA because of the reduction in nitride traps within AlNx dielectrics. In addition, the centroids of nitride traps are modified by RTA and a tunneling barrier at the Ir/AlNx interface is formed for the enhancement of nonlinearity to more than 10 during RS operation. The nonlinear behaviors of AlNx-based RRAMs with RTA can be attributed to the combination of conduction mechanisms of direct tunneling (DT) and trap-assisted tunneling (TAT) at low- and high-voltage regions, respectively. Furthermore, superior device re liabilities of AlNx-based RRAMs with RTA are achieved such as an endurance of over 500 cycles and data retention of more than 10(4) s. The adjustable nonlinear features and superior memory properties render the annealed AlNx-based RRAMs promising for future high-density nonvolatile memory arrays.
机译：研究了具有快速热退火（RTA）的基于氮化铝（AlNx）的电阻随机存取存储器（RRAM）的非线性电阻切换（RS）特性。由于减少了AlNx电介质中的氮化物陷阱，RTA可以提高基于AlN的RRAM的工作电压。此外，氮化物陷阱的质心通过RTA进行了修改，并在Ir / AlNx界面处形成了隧道势垒，以在RS操作过程中将非线性增强到10以上。具有RTA的基于AlNx的RRAM的非线性行为可以归因于分别在低压和高压区域的直接隧穿（DT）和陷阱辅助隧穿（TAT）的传导机制的组合。此外，具有RTA的基于AlNx的RRAM具有更高的设备可靠性，例如超过500个循环的耐久性和超过10（4）s的数据保留时间。可调的非线性特性和出色的存储性能使退火的基于AlNx的RRAM有望用于未来的高密度非易失性存储阵列。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号