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首页> 外文期刊>Microelectronic Engineering >A novel OTA-based circuit model corroborated by an experimental semiconductor memristor
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A novel OTA-based circuit model corroborated by an experimental semiconductor memristor

机译：实验半导体忆阻器证实了基于OTA的新型电路模型

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摘要

A semiconductor memristor device based on a 300-nm ZnO thin film was fabricated by direct-current reactive sputter. The memristive behavior of this device was confirmed by time dependent current-voltage (I-V-t) measurements, and the distinctive pinched hysteresis I-V loops of the memristor were observed. Structural analysis of the ZnO memristor was carried out using both X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). After physical implementation of the memristor, an operational transconductance amplifier (OTA) based memristor circuit was designed to emulate the ZnO-based semiconductor memristor for use in memristor-based circuit applications. All simulations were in good agreement with experimental results. In addition, a comparison of the proposed circuit with other memristor emulators was presented.
机译：通过直流电抗溅射技术制造了基于300nm ZnO薄膜的半导体忆阻器。该器件的忆阻行为已通过与时间有关的电流-电压（I-V-t）测量得到证实，并且观察到了忆阻器独特的收缩磁滞I-V回路。 ZnO忆阻器的结构分析是使用X射线粉末衍射（XRD）和扫描电子显微镜（SEM）进行的。在物理实现忆阻器之后，设计了基于运算跨导放大器（OTA）的忆阻器电路，以仿真基于ZnO的半导体忆阻器，以用于基于忆阻器的电路应用。所有模拟与实验结果均吻合良好。此外，还提出了该电路与其他忆阻器仿真器的比较。

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  • 来源
    《Microelectronic Engineering》 |2018年第7期|56-60|共5页
  • 作者

    Gul Fatih; Babacan Yunus;

  • 作者单位

    Gumushane Univ, Dept Software Engn, TR-29100 Gumushane, Turkey;

    Erzincan Univ, Dept Elect & Elect Engn, TR-24100 Erzincan, Turkey;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Memristor; Zinc oxide; OTA; Memristor emulator;

    机译：忆阻器;氧化锌;OTA;忆阻器仿真器;

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