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首页> 外文期刊>Microelectronic Engineering >Formation of Ge quantum dots on Si substrate using consecutive deposition of Ge/C and in situ post annealing
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Formation of Ge quantum dots on Si substrate using consecutive deposition of Ge/C and in situ post annealing

机译：通过连续沉积Ge / C和原位后退火在Si衬底上形成Ge量子点

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摘要

Effects of intermediate carbon between amorphous Ge and Si surface on formation of Ge dots recrystallized through post-annealing were studied. The samples were prepared by solid-source molecular beam epitaxy system with electron beam gun for C sublimation and K-cell for Ge evaporation. C and Ge were deposited sequentially at 200 ℃ and Ge/C/Si was subsequently annealed in MBE chamber. Ge dots were formed at annealing temperature (I_A) of 400 ℃ for Ge(1 nm)/C(0.25 ML)/Si. The dot size increased with T_A, and both Ge(220) peak intensity measured by in-plane XRD and dot density were the highest at T_A of 700 ℃. A strong correlation between dot density and surface roughness indicated recrystallization of Ge occurred during the dot formation promoted by Si-C bonds. Concerning the effect of C coverage, there was an optimum at 0.25 ML which gave good crystallinity of Ge dots. Coalesced dots with bad crystallinity were observed for less or more C coverage. This was considered that dot formation combined with S-K growth mode due to large bare Si surface occurred at small C coverage and excess C incorporated into Ge dots at large C coverage. In terms of Ge thickness, there was also an optimum at 1 nm to provide sufficient Ge atoms without excess.
机译：研究了非晶Ge和Si表面之间的中间碳对通过后退火再结晶的Ge点形成的影响。样品通过固体源分子束外延系统制备，电子束枪用于C升华，K细胞用于Ge蒸发。 C和Ge在200℃依次沉积，随后在MBE室中退火Ge / C / Si。 Ge（1 nm）/ C（0.25 ML）/ Si的退火温度（I_A）为400℃。随T_A的增加，点尺寸增大，在700℃的T_A下，通过面内XRD测量的Ge（220）峰强度和点密度均最高。点密度与表面粗糙度之间的强相关性表明，在由Si-C键促进的点形成过程中，发生了Ge的再结晶。关于C覆盖率的影响，在0.25 ML处有一个最佳值，它给出了良好的Ge点结晶度。观察到结晶度差的聚结点的C覆盖率较低或较高。这被认为是由于在C覆盖率低的情况下Si表面大而形成了与S-K生长模式组合的点，在C覆盖率大的情况下，Ge点中混入了过量的C。就Ge厚度而言，在1nm处也存在最优的条件，以提供足够的Ge原子而没有过量。

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  • 来源
    《Microelectronic Engineering》 |2014年第8期|28-32|共5页
  • 作者

    Shinji Hatakeyama; Yuhki Itoh; Tomoyuki Kawashima; Katsuyoshi Washio;

  • 作者单位

    Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;

    Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;

    Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;

    Graduate School of Engineering, Tohoku University, 6-6-05, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Molecular beam epitaxy (MBE); Si; Carbon; Ge; Quantum dot;

    机译：分子束外延（MBE）;碳;葛;量子点;

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