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首页> 外文期刊>Microelectronic Engineering >Electron beam lithography in thick negative tone chemically amplified resist: Controlling sidewall profile in deep trenches and channels
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Electron beam lithography in thick negative tone chemically amplified resist: Controlling sidewall profile in deep trenches and channels

机译：厚负性化学放大抗蚀剂中的电子束光刻：控制深沟槽和沟道中的侧壁轮廓

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摘要

Exposure characteristics of 30 keV electron beam lithography in 6 μm thick chemically amplified resist SU-8 is reported. The exposure dose variation shows remarkable impact on resolution and sidewall profiles of 3D structures of SU-8. Sidewall profiles of the experimentally realized vertical structures have been analyzed by comparing them with three dimensional electron energy deposition profiles in the resist. The analysis shows that the broadening of the developed structures in excess of a particular energy deposition density contour follows non-monotonic variation. The sidewall profiles indicate that the crosslinking of the resist proceeds in a reaction-diffusion environment in which the photoacid diffusion itself is controlled by crosslink density. We also demonstrate large area fabrication of two types of SU-8 deep channels connected by bridges, by exploiting the energy dependent range of e-beam in the resist.
机译：报道了在6μm厚的化学放大抗蚀剂SU-8中30 keV电子束光刻的曝光特性。曝光剂量变化对SU-8的3D结构的分辨率和侧壁轮廓显示出显着影响。通过将实验实现的垂直结构的侧壁轮廓与抗蚀剂中的三维电子能量沉积轮廓进行比较，已对其进行了分析。分析表明，超出特定能量沉积密度轮廓线的发达结构的展宽遵循非单调变化。侧壁轮廓表明，抗蚀剂的交联在反应扩散环境中进行，在该反应扩散环境中，光酸扩散本身受交联密度控制。我们还演示了通过利用抗蚀剂中电子束的能量相关范围来大面积制作两种通过桥连接的SU-8深通道的方法。

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  • 来源
    《Microelectronic Engineering》 |2014年第11期|1-7|共7页
  • 作者

    Mihir Sarkar; Y.N. Mohapatra;

  • 作者单位

    Department of Physics, Indian Institute of Technology Kanpur, Kanpur 208016, India, Samtel Center for Display Technologies, Indian Institute of Technology Kanpur, Kanpur 208016, India;

    Department of Physics, Indian Institute of Technology Kanpur, Kanpur 208016, India, Samtel Center for Display Technologies, Indian Institute of Technology Kanpur, Kanpur 208016, India, Materials Science Programme, Indian Institute of Technology Kanpur, Kanpur 208016, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Electron beam lithography; Electron matter interaction; Chemically amplified resist;

    机译：电子束光刻;电子物质相互作用;化学放大抗蚀剂;

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