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首页> 外文期刊>Microelectronic Engineering >Exploration on chemical mechanical planarization of ZnO functional thin films for novel devices
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Exploration on chemical mechanical planarization of ZnO functional thin films for novel devices

机译：新型器件用ZnO功能薄膜的化学机械平面化研究

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摘要

Zinc oxide (ZnO) is an attractive material for its application in the electronics, optics, acoustics, and sen-sorfield. With the shrinking of minimum feature size of the devices and the increasing of devices function layers, surface planarization of each layer is demanded in the devices manufacturing. However, ZnO thin films deposited directly have high surface roughness which could cause device performance degradation. Therefore, ZnO thin films must be planarized in order to obtain high density and high integration devices. In this paper, chemical mechanical polishing (CMP) was used for ZnO thin films planarization, these films were deposited on 4 inch Si blanket wafer by RF magnetron sputtering. The influence of the process parameters on CMP removal rate including pressure, platen speed was discussed, and the results demonstrated that removal rate still exist when there is no pressure and velocity, hence Preston equation was slightly modified. The effect of slurry pH on CMP removal rate was also investigated in detail after considering different corrosion rate of ZnO films in different solution. After optimizing CMP process parameter, the removal rate of ZnO films was up to 165.1 nm/min, and the surface root mean square roughness was reduced from 16 to 1.9 A.
机译：氧化锌（ZnO）是一种有吸引力的材料，可用于电子，光学，声学和传感领域。随着器件的最小特征尺寸的缩小和器件功能层的增加，在器件制造中需要每一层的表面平坦化。然而，直接沉积的ZnO薄膜具有较高的表面粗糙度，这可能导致器件性能下降。因此，必须使ZnO薄膜平坦化以获得高密度和高集成度的器件。在本文中，化学机械抛光（CMP）用于ZnO薄膜的平坦化，通过RF磁控溅射将这些薄膜沉积在4英寸的Si覆盖晶片上。讨论了工艺参数对CMP去除率（包括压力，压板速度）的影响，结果表明在没有压力和速度的情况下去除率仍然存在，因此对Preston方程进行了一些修改。考虑不同溶液中ZnO膜的腐蚀速率，还详细研究了浆料pH对CMP去除率的影响。优化CMP工艺参数后，ZnO薄膜的去除速率最高为165.1 nm / min，表面均方根粗糙度从16 A降低至1.9 A.

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  • 来源
    《Microelectronic Engineering》 |2013年第1期|37-41|共5页
  • 作者

    Kailiang Zhang; Taofeng Zhang; Fang Wang; Yujie Yuan; Yuzhuo Li;

  • 作者单位

    School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, PR China;

    School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, PR China;

    School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, PR China;

    School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, PR China;

    Center for Advanced Materials Processing, Clarkson University, Potsdam, NY 13699, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ZnO films; CMP; slurry; parameter optimization; removal mechanism;

    机译：ZnO薄膜CMP;泥浆;参数优化;清除机制;

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